DSPIC30F2011-20E/ML Microchip Technology, DSPIC30F2011-20E/ML Datasheet - Page 52
![IC DSPIC MCU/DSP 12K 28QFN](/photos/6/81/68120/150-28-qfn_sml.jpg)
DSPIC30F2011-20E/ML
Manufacturer Part Number
DSPIC30F2011-20E/ML
Description
IC DSPIC MCU/DSP 12K 28QFN
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F2011-20ISO.pdf
(66 pages)
2.DSPIC30F2011-20ISO.pdf
(210 pages)
3.DSPIC30F2011-20ISO.pdf
(14 pages)
4.DSPIC30F2011-20ISO.pdf
(6 pages)
5.DSPIC30F2011-20ISO.pdf
(18 pages)
6.DSPIC30F2011-20IP.pdf
(26 pages)
Specifications of DSPIC30F2011-20E/ML
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
12
Program Memory Size
12KB (4K x 24)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 8x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
For Use With
DAF30-4 - DEVICE ATP FOR ICE4000
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
- DSPIC30F2011-20ISO PDF datasheet
- DSPIC30F2011-20ISO PDF datasheet #2
- DSPIC30F2011-20ISO PDF datasheet #3
- DSPIC30F2011-20ISO PDF datasheet #4
- DSPIC30F2011-20ISO PDF datasheet #5
- DSPIC30F2011-20IP PDF datasheet #6
- Current page: 52 of 210
- Download datasheet (3Mb)
dsPIC30F2011/2012/3012/3013
5.6.3
Example 5-2
can be used to load the 96 bytes of write latches. 32
TBLWTL and 32 TBLWTH instructions are needed to
load the write latches selected by the Table Pointer.
EXAMPLE 5-2:
EXAMPLE 5-3:
DS70139G-page 52
; Set up a pointer to the first program memory location to be written
; program memory selected, and writes enabled
; Perform the TBLWT instructions to write the latches
; 0th_program_word
; 1st_program_word
;
; 31st_program_word
Note:
2nd_program_word
MOV
MOV
MOV
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
MOV
MOV
TBLWTL W2
TBLWTH W3
•
•
•
MOV
MOV
TBLWTL W2
TBLWTH W3
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
LOADING WRITE LATCHES
In
shows a sequence of instructions that
Example
#0x0000,W0
W0
#0x6000,W0
#LOW_WORD_0,W2
#HIGH_BYTE_0,W3
#LOW_WORD_1,W2
#HIGH_BYTE_1,W3
#LOW_WORD_2,W2
#HIGH_BYTE_2,W3
#LOW_WORD_31,W2
#HIGH_BYTE_31,W3
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
,
,
,
,
,
,
,
LOADING WRITE LATCHES
INITIATING A PROGRAMMING SEQUENCE
TBLPAG
[W0]
[W0++]
[W0]
[W0++]
NVMKEY
NVMKEY
[W0]
[W0++]
[W0]
[W0++]
5-2, the contents of the upper byte of W3 has no effect.
; Block all interrupts with priority <7 for
; next 5 instructions
;
; Write the 0x55 key
;
; Write the 0xAA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
;
; Initialize PM Page Boundary SFR
; An example program memory address
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
;
;
; Write PM low word into program latch
; Write PM high byte into program latch
5.6.4
For protection, the write initiate sequence for NVMKEY
must be used to allow any erase or program operation
to proceed. After the programming command has been
executed, the user must wait for the programming time
until programming is complete. The two instructions
following the start of the programming sequence
should be NOPs as shown in
INITIATING THE PROGRAMMING
SEQUENCE
© 2010 Microchip Technology Inc.
Example
5-3.
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