DSPIC30F2011-20E/ML Microchip Technology, DSPIC30F2011-20E/ML Datasheet - Page 50
![IC DSPIC MCU/DSP 12K 28QFN](/photos/6/81/68120/150-28-qfn_sml.jpg)
DSPIC30F2011-20E/ML
Manufacturer Part Number
DSPIC30F2011-20E/ML
Description
IC DSPIC MCU/DSP 12K 28QFN
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F2011-20ISO.pdf
(66 pages)
2.DSPIC30F2011-20ISO.pdf
(210 pages)
3.DSPIC30F2011-20ISO.pdf
(14 pages)
4.DSPIC30F2011-20ISO.pdf
(6 pages)
5.DSPIC30F2011-20ISO.pdf
(18 pages)
6.DSPIC30F2011-20IP.pdf
(26 pages)
Specifications of DSPIC30F2011-20E/ML
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
12
Program Memory Size
12KB (4K x 24)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 8x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
For Use With
DAF30-4 - DEVICE ATP FOR ICE4000
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
- DSPIC30F2011-20ISO PDF datasheet
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dsPIC30F2011/2012/3012/3013
5.4
The dsPIC30F Flash program memory is organized
into rows and panels. Each row consists of 32
instructions or 96 bytes. Each panel consists of 128
rows or 4K x 24 instructions. RTSP allows the user to
erase one row (32 instructions) at a time and to
program four instructions at one time. RTSP may be
used to program multiple program memory panels, but
the table pointer must be changed at each panel
boundary.
Each panel of program memory contains write latches
that hold 32 instructions of programming data. Prior to
the actual programming operation, the write data must
be loaded into the panel write latches. The data to be
programmed into the panel is loaded in sequential
order into the write latches; instruction 0, instruction 1,
etc. The instruction words loaded must always be from
a 32 address boundary.
The basic sequence for RTSP programming is to set up
a Table Pointer, then do a series of TBLWT instructions
to load the write latches. Programming is performed by
setting the special bits in the NVMCON register. 32
TBLWTL and four TBLWTH instructions are required to
load the 32 instructions. If multiple panel programming
is required, the Table Pointer needs to be changed and
the next set of multiple write latches written.
All of the table write operations are single-word writes
(2 instruction cycles), because only the table latches
are written. A programming cycle is required for
programming each row.
The Flash Program Memory is readable, writable and
erasable during normal operation over the entire V
range.
DS70139G-page 50
RTSP Operation
DD
5.5
The four SFRs used to read and write the program
Flash memory are:
• NVMCON
• NVMADR
• NVMADRU
• NVMKEY
5.5.1
The NVMCON register controls which blocks are to be
erased, which memory type is to be programmed, and
start of the programming cycle.
5.5.2
The NVMADR register is used to hold the lower two
bytes of the Effective Address. The NVMADR register
captures the EA<15:0> of the last table instruction that
has been executed and selects the row to write.
5.5.3
The NVMADRU register is used to hold the upper byte
of the Effective Address. The NVMADRU register
captures the EA<23:16> of the last table instruction
that has been executed.
5.5.4
NVMKEY is a write-only register that is used for write
protection. To start a programming or an erase
sequence, the user must consecutively write 0x55 and
0xAA to the NVMKEY register. Refer to
“Programming Operations”
Note:
Control Registers
NVMCON REGISTER
NVMADR REGISTER
NVMADRU REGISTER
NVMKEY REGISTER
The user can also directly write to the
NVMADR and NVMADRU registers to
specify a program memory address for
erasing or programming.
© 2010 Microchip Technology Inc.
for further details.
Section 5.6
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