ATMEGA32A-MUR Atmel, ATMEGA32A-MUR Datasheet - Page 272
![MCU AVR 32KB FLASH 16MHZ 44QFN](/photos/12/13/121316/313-44-qfn_sml.jpg)
ATMEGA32A-MUR
Manufacturer Part Number
ATMEGA32A-MUR
Description
MCU AVR 32KB FLASH 16MHZ 44QFN
Manufacturer
Atmel
Series
AVR® ATmegar
Datasheet
1.ATMEGA32A-MU.pdf
(353 pages)
Specifications of ATMEGA32A-MUR
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
32KB (16K x 16)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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26.7
26.7.1
26.7.2
26.7.3
8155C–AVR–02/11
Parallel Programming
Enter Programming Mode
Considerations for Efficient Programming
Chip Erase
Table 26-10. Command Byte Bit Coding
The following algorithm puts the device in Parallel Programming mode:
Note, if External Crystal or External RC configuration is selected, it may not be possible to apply
qualified XTAL1 pulses. In such cases, the following algorithm should be followed:
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
1. Apply 4.5V - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least 6 times
3. Set the Prog_enable pins listed in
4. Apply 11.5V - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after
1. Set Prog_enable pins listed in
2. Apply 4.5V - 5.5V between V
3. Wait 100 µs.
4. Re-program the fuses to ensure that External Clock is selected as clock source
5. Exit Programming mode by power the device down or by bringing RESET pin to 0b0.
6. Entering Programming mode with the original algorithm, as described above.
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value $FF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
locations.
EESAVE fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
100 ns.
+12V has been applied to RESET, will cause the device to fail entering Programming
mode.
RESET.
(CKSEL3:0 = 0b0000) If Lock bits are programmed, a Chip Erase command must be
executed before changing the fuses.
Command Byte
0000 1000
0000 0100
0000 0010
0000 0011
Command Executed
Read Signature Bytes and Calibration byte
Read Fuse and Lock bits
Read Flash
Read EEPROM
CC
CC
Table 26-8 on page 270
and GND, and wait at least 100 µs.
and GND simultanously as 11.5V - 12.5V is applied to
Table 26-8 on page 270
(1)
memories plus Lock bits. The Lock bits are
to “0000”.
to “0000” and wait at least
ATmega32A
272
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