ATMEGA8L-8MUR Atmel, ATMEGA8L-8MUR Datasheet - Page 221
![no-image](/images/manufacturer_photos/0/0/78/atmel_sml.jpg)
ATMEGA8L-8MUR
Manufacturer Part Number
ATMEGA8L-8MUR
Description
MCU AVR 8KB FLASH 8MHZ 32QFN
Manufacturer
Atmel
Series
AVR® ATmegar
Datasheet
1.ATMEGA8L-8MU.pdf
(302 pages)
Specifications of ATMEGA8L-8MUR
Core Processor
AVR
Core Size
8-Bit
Speed
8MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
23
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Parallel
Programming
Enter Programming
Mode
Considerations for
Efficient Programming
Chip Erase
2486Z–AVR–02/11
The following algorithm puts the device in Parallel Programming mode:
1. Apply 4.5V - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least 6 times
3. Set the Prog_enable pins listed in
4. Apply 11.5V - 12.5V to RESET. Any activity on Prog_enable pins within 100ns after +12V
Note, if the RESET pin is disabled by programming the RSTDISBL Fuse, it may not be possible
to follow the proposed algorithm above. The same may apply when External Crystal or External
RC configuration is selected because it is not possible to apply qualified XTAL1 pulses. In such
cases, the following algorithm should be followed:
1. Set Prog_enable pins listed in
2. Apply 4.5V - 5.5V between V
3. Wait 100ns
4. Re-program the fuses to ensure that External Clock is selected as clock source
5. Exit Programming mode by power the device down or by bringing RESET pin to 0’b0
6. Entering Programming mode with the original algorithm, as described above
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
•
•
•
The Chip Erase will erase the Flash and EEPROM
not reset until the Program memory has been completely erased. The Fuse Bits are not
changed. A Chip Erase must be performed before the Flash and/or the EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading
2. Set BS1 to “0”
3. Set DATA to “1000 0000”. This is the command for Chip Erase
4. Give XTAL1 a positive pulse. This loads the command
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low
6. Wait until RDY/BSY goes high before loading a new command
100ns
has been applied to RESET, will cause the device to fail entering Programming mode
RESET
(CKSEL3:0 = 0’b0000) and RESET pin is activated (RSTDISBL unprogrammed). If Lock
Bits are programmed, a chip erase command must be executed before changing the
fuses
The command needs only be loaded once when writing or reading multiple memory
locations
Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase
Address High byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading
1. The EEPRPOM memory is preserved during chip erase if the EESAVE Fuse is programmed
CC
CC
Table 92 on page 220
and GND, and wait at least 100µs
and GND simultaneously as 11.5V - 12.5V is applied to
Table 92 on page 220
(1)
memories plus Lock Bits. The Lock Bits are
to “0000”
to “0000” and wait at least
ATmega8(L)
221
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