PIC18F4585-I/ML Microchip Technology, PIC18F4585-I/ML Datasheet - Page 430

• Manufacturer Part Number: PIC18F4585-I/ML
• Description: IC MCU FLASH 24KX16 44QFN
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18F4585-I/ML

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: CAN, I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
• Number Of I /o: 36
• Program Memory Size: 48KB (24K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 3.25K x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-QFN
• Core: PIC
• Processor Series: PIC18F
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 40 MHz
• Data Ram Size: 3.25 KB
• On-chip Adc: 11 bit
• Number Of Programmable I/os: 44
• Number Of Timers: 1 x 8
• Operating Supply Voltage: 4.2 V to 5.5 V
• Mounting Style: SMD/SMT
• Height: 0.88 mm
• Interface Type: I2C, SPI, EUSART
• Length: 8 mm
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.2 V
• Width: 8 mm
• For Use With: XLT44QFN2 - SOCKET TRAN ICE 44QFN/40DIPAC164322 - MODULE SOCKET MPLAB PM3 28/44QFNI3-DB18F4680 - BOARD DAUGHTER ICEPIC3444-1001 - DEMO BOARD FOR PICMICRO MCU
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PIC18F2585/2680/4585/4680
TABLE 27-1:
DS39625C-page 428
DC Characteristics
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
Note 1:
Param
No.
2:
3:
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
V
T
T
DDP
Sym
DEW
RETD
REF
IE
IW
IW
RETD
PP
D
DRW
P
PR
IE
IW
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Required only if Single-Supply Programming is disabled.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
V
V
or Write
V
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-timed Write Cycle Time
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-timed Write
Characteristic
PP
/RE3 pin
(2)
(1)
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
100K
V
V
V
9.00
10K
Min
1M
4.5
4.5
40
40
—
—
—
—
MIN
MIN
MIN
1
Typ†
100K
10M
100
1M
—
—
—
—
—
—
—
—
—
4
4
2
13.25
Max
5.5
5.5
5.5
5.5
5.5
10
—
—
—
—
—
—
—
—
—
Units
Year Provided no other
Year Provided no other
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
ms
ms
ms
ms
V
V
V
V
V
V
A
≤ +85°C for industrial
© 2007 Microchip Technology Inc.
(Note 3)
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP™ port
Using ICSP port
V
voltage
V
V
specifications are violated
MIN
MIN
MIN
DD
DD
> 4.5V
> 4.5V
= Minimum operating
= Minimum operating
= Minimum operating
Conditions