DSPIC30F2010-30I/SP Microchip Technology, DSPIC30F2010-30I/SP Datasheet - Page 52

• Manufacturer Part Number: DSPIC30F2010-30I/SP
• Description: IC DSPIC MCU/DSP 12K 28DIP
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F2010-30I/SP

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 30 MIPs
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Motor Control PWM, QEI, POR, PWM, WDT
• Number Of I /o: 20
• Program Memory Size: 12KB (4K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 6x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-DIP (0.300", 7.62mm)
• Core Frequency: 40MHz
• Core Supply Voltage: 5.5V
• Embedded Interface Type: I2C, SPI, UART
• No. Of I/o's: 20
• Flash Memory Size: 12KB
• Supply Voltage Range: 2.5V To 5.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: DV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: DSPIC30F2010-30I; DSPIC30F2010-30I; DSPIC30F2010-30I/SPG; DSPIC30F201030ISP

dsPIC30F2010
7.3.2
To write a block of data EEPROM, write to all sixteen
latches first, then set the NVMCON register and
program the block.
EXAMPLE 7-5:
7.4
Depending on the application, good programming
practice may dictate that the value written to the mem-
ory should be verified against the original value. This
should be used in applications where excessive writes
can stress bits near the specification limit.
DS70118J-page 52
MOV
MOV
MOV
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
MOV
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
Write Verify
WRITING A BLOCK OF DATA
EEPROM
#LOW_ADDR_WORD,W0
#HIGH_ADDR_WORD,W1
W1
#data1,W2
W2
#data2,W2
W2
#data3,W2
W2
#data4,W2
W2
#data5,W2
W2
#data6,W2
W2
#data7,W2
W2
#data8,W2
W2
#data9,W2
W2
#data10,W2
W2
#data11,W2
W2
#data12,W2
W2
#data13,W2
W2
#data14,W2
W2
#data15,W2
W2
#data16,W2
W2
#0x400A,W0
W0
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
TBLPAG
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
NVMCON
NVMKEY
NVMKEY
DATA EEPROM BLOCK WRITE
; Init pointer
; Get 1st data
; write data
; Get 2nd data
; write data
; Get 3rd data
; write data
; Get 4th data
; write data
; Get 5th data
; write data
; Get 6th data
; write data
; Get 7th data
; write data
; Get 8th data
; write data
; Get 9th data
; write data
; Get 10th data
; write data
; Get 11th data
; write data
; Get 12th data
; write data
; Get 13th data
; write data
; Get 14th data
; write data
; Get 15th data
; write data
; Get 16th data
; write data. The NVMADR captures last table access address.
; Select data EEPROM for multi word op
; Operate Key to allow program operation
; Block all interrupts with priority <7 for next 5 instructions
; Write the 0x55 key
; Write the 0xAA key
; Start write cycle
7.5
There are conditions when the device may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been built-in. On power-up, the WREN bit is cleared;
also, the Power-up Timer prevents EEPROM write.
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch or software malfunction.
Protection Against Spurious Write
© 2011 Microchip Technology Inc.