DSPIC30F2010-20I/MM Microchip Technology, DSPIC30F2010-20I/MM Datasheet - Page 4

IC DSPIC MCU/DSP 12K 28QFN

DSPIC30F2010-20I/MM

Manufacturer Part Number
DSPIC30F2010-20I/MM
Description
IC DSPIC MCU/DSP 12K 28QFN
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr

Specifications of DSPIC30F2010-20I/MM

Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, Motor Control PWM, QEI, POR, PWM, WDT
Number Of I /o
20
Program Memory Size
12KB (4K x 24)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-QFN
Core Frequency
40MHz
Core Supply Voltage
5.5V
Embedded Interface Type
I2C, SPI, UART
No. Of I/o's
20
Flash Memory Size
12KB
Supply Voltage Range
2.5V To 5.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
AC164322 - MODULE SOCKET MPLAB PM3 28/44QFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
DSPIC30F2010-20I/MMG
DSPIC30F201020IMM
DSPIC30F201020IMM
dsPIC30F2010
TABLE 2:
DS80451E-page 4
Note 1:
EEPROM
EEPROM
Controller
Program
Interrupt
Memory
Module
Sleep
Mode
Flash
Data
Data
ADC
QEI
QEI
Only those issues indicated in the last column apply to the current silicon revision.
Accumulation
Accumulation
Consumption
Timer Gated
Timer Gated
Write/Erase
Operation
Operation
I
PD
SILICON ISSUE SUMMARY (CONTINUED)
Feature
in Sleep
Current
Current
RTSP
Mode
Mode
Mode
Sleep
Number
Item
32.
33.
34.
35.
36.
37.
38.
39.
Write/Erase operations performed on Data EEPROM
need to be timed by the application software. Self-timed
write operations are not supported.
When a device Reset occurs while an RTSP operation
is in progress, code execution may lead to an Address
Error trap.
Data EEPROM is operational at a device throughput of
up to 25 MIPS.
A specific write sequence for the Interrupt Priority
Control 2 (IPC2) Special Function Register (SFR) is
required.
The device exhibits I
certain work arounds are required to achieve I
range.
When Timer Gated Accumulation is enabled, the QEI
module does not generate an interrupt on every falling
edge.
When Timer Gated Accumulation is enabled, and an
external signal is applied, the POSCNT increments and
generates an interrupt after a match with MAXCNT.
If the ADC module is in an enabled state when the
device enters Sleep Mode, the power-down current
(I
specifications.
PD
) of the device may exceed the device data sheet
Issue Summary
PD
less than 0.1 μA. However,
PD
© 2010 Microchip Technology Inc.
in this
A0 A1 A2 A3 A4
X
X
X
X
X
X
X
X
Revisions
X
X
X
Affected
X
X
X
X
X
X
(1)
X
X
X

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