PIC18F26J11-I/SO Microchip Technology, PIC18F26J11-I/SO Datasheet - Page 102
![IC PIC MCU FLASH 64K 2V 28-SOIC](/photos/6/59/65909/150-28-soic_sml.jpg)
PIC18F26J11-I/SO
Manufacturer Part Number
PIC18F26J11-I/SO
Description
IC PIC MCU FLASH 64K 2V 28-SOIC
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheets
1.MA180023.pdf
(528 pages)
2.PIC18LF24J10-ISS.pdf
(32 pages)
3.PIC18F24J11-ISS.pdf
(14 pages)
4.PIC18F26J11-ISO.pdf
(28 pages)
Specifications of PIC18F26J11-I/SO
Program Memory Type
FLASH
Program Memory Size
64KB (32K x 16)
Package / Case
28-SOIC (7.5mm Width)
Core Processor
PIC
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
16
Ram Size
3.8K x 8
Voltage - Supply (vcc/vdd)
2.15 V ~ 3.6 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
3776 B
Interface Type
EUSART, I2C, SPI
Maximum Clock Frequency
48 MHz
Number Of Timers
5
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, DV164136, DM183032, MA180023, DM183022
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 10 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
AC164322 - MODULE SOCKET MPLAB PM3 28/44QFN
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
- MA180023 PDF datasheet
- PIC18LF24J10-ISS PDF datasheet #2
- PIC18F24J11-ISS PDF datasheet #3
- PIC18F26J11-ISO PDF datasheet #4
- Current page: 102 of 528
- Download datasheet (8Mb)
PIC18F46J11 FAMILY
6.4
The minimum erase block is 512 words or 1024 bytes.
Only through the use of an external programmer, or
through ICSP control, can larger blocks of program
memory be bulk erased. Word erase in the Flash array
is not supported.
When initiating an erase sequence from the micro-
controller itself, a block of 1024 bytes of program
memory is erased. The Most Significant 12 bits of the
TBLPTR<21:10> point to the block being erased.
TBLPTR<9:0> are ignored.
The EECON1 register commands the erase operation.
The WREN bit must be set to enable write operations.
The FREE bit is set to select an erase operation. For
protection, the write initiate sequence for EECON2
must be used.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted while in a long write
cycle. The long write will be terminated by the internal
programming timer.
EXAMPLE 6-2:
DS39932C-page 102
Required
Sequence
Erasing Flash Program Memory
ERASE_ROW
ERASING FLASH PROGRAM MEMORY
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
CODE_ADDR_UPPER
TBLPTRU
CODE_ADDR_HIGH
TBLPTRH
CODE_ADDR_LOW
TBLPTRL
EECON1, WREN
EECON1, FREE
INTCON, GIE
55h
EECON2
0AAh
EECON2
EECON1, WR
INTCON, GIE
; load TBLPTR with the base
; address of the memory block
; enable write to memory
; enable Erase operation
; disable interrupts
; write 55h
; write 0AAh
; start erase (CPU stall)
; re-enable interrupts
6.4.1
The sequence of events for erasing a block of internal
program memory location is:
1.
2.
3.
4.
5.
6.
7.
8.
Load Table Pointer register with address of row
being erased.
Set the WREN and FREE bits (EECON1<2,4>)
to enable the erase operation.
Disable interrupts.
Write 55h to EECON2.
Write 0AAh to EECON2.
Set the WR bit; this will begin the erase cycle.
The CPU will stall for the duration of the erase
for T
Re-enable interrupts.
IE
(see parameter D133B).
FLASH PROGRAM MEMORY
ERASE SEQUENCE
© 2009 Microchip Technology Inc.
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