PIC12F519-I/SN Microchip Technology, PIC12F519-I/SN Datasheet - Page 23

• Manufacturer Part Number: PIC12F519-I/SN
• Description: IC PIC MCU FLASH 1KX12 8SOIC
• Manufacturer: Microchip Technology
• Series: PIC® 12Fr

Specifications of PIC12F519-I/SN

• Program Memory Type: FLASH
• Program Memory Size: 1.5KB (1K x 12)
• Package / Case: 8-SOIC (3.9mm Width)
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 8MHz
• Peripherals: POR, WDT
• Number Of I /o: 5
• Ram Size: 41 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC12F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 41 B
• Interface Type: USB
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 6
• Number Of Timers: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005
• Minimum Operating Temperature: - 40 C
• Height: 1.25 mm
• Length: 4.9 mm
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2 V
• Width: 3.9 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Connectivity: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

5.0
The Flash data memory is readable and writable during
normal operation (full V
directly mapped in the register file space. Instead, it is
indirectly addressed through the Special Function
Registers (SFRs).
5.1
To read a Flash data memory location the user must:
• Write the EEADR register
• Set the RD bit of the EECON register
The value written to the EEADR register determines
which Flash data memory location is read. Setting the
RD bit of the EECON register initiates the read. Data
from the Flash data memory read is available in the
EEDATA register immediately. The EEDATA register
will hold this value until another read is initiated or it is
modified by a write operation. Program execution is
suspended while the read cycle is in progress. Execu-
tion will continue with the instruction following the one
that sets the WR bit. See Example 1 for sample code.
EXAMPLE 1:
5.2
Flash data memory is erased one row at a time and
written one byte at a time. The 64-byte array is made
up of eight rows. A row contains eight sequential bytes.
Row boundaries exist every eight bytes.
Generally, the procedure to write a byte of data to Flash
data memory is:
1.
2.
3.
© 2008 Microchip Technology Inc.
Note: Only a BSF command will work to enable the
BANKSEL EEADR
MOVF DATA_EE_ADDR, W
MOVWF EEADR
BANKSEL EECON1
BSF EECON, RD
MOVF EEDATA, W
Identify the row containing the address where
the byte will be written.
If there is other information in that row that must
be saved, copy those bytes from Flash data
memory to RAM.
Perform a row erase of the row of interest.
FLASH DATA MEMORY
CONTROL
Reading Flash Data Memory
Writing and Erasing Flash Data
Memory
Flash data memory read documented in
Example 1. No other sequence of com-
mands will work, no exceptions.
READING FROM FLASH
DATA MEMORY
DD
range). This memory is not
;
;
;Data Memory
;Address to read
;
;EE Read
;W = EEDATA
4.
To prevent accidental corruption of the Flash Data
Memory, an unlock sequence is required to initiate a
write or erase cycle. This sequence requires that the bit
set instructions used to configure the EECON register
happen exactly as shown in Example 2 and Example 3,
depending on the operation requested.
5.2.1
A row must be manually erased before writing new
data. The following sequence must be performed for a
single row erase.
1.
2.
3.
4.
If the WREN bit is not set in the instruction cycle after
the FREE bit is set, the FREE bit will be cleared in
hardware.
If the WR bit is not set in the instruction cycle after the
WREN bit is set, the WREN bit will be cleared in
hardware.
Sample code that follows this procedure is included in
Example 2.
Program execution is suspended while the erase cycle
is in progress. Execution will continue with the instruc-
tion following the one that sets the WR bit.
EXAMPLE 2:
BANKSEL
MOVLW
MOVWF
BSF
BSF
BSF
Note 1: The FREE bit may be set by any com-
Write the new byte of data and any saved bytes
back to the appropriate addresses in Flash data
memory.
Load EEADR with an address in the row to be
erased.
Set the FREE bit to enable the erase.
Set the WREN bit to enable write access to the
array.
Set the WR bit to initiate the erase cycle.
2: Bits <5:3> of the EEADR register indicate
ERASING FLASH DATA MEMORY
EEADR
EE_ADR_ERASE
EEADR
EECON,FREE
EECON,WREN
EECON,WR
mand normally used by the core. How-
ever, the WREN and WR bits can only be
set using a series of BSF commands, as
documented in Example 1. No other
sequence of commands will work, no
exceptions.
which row is to be erased.
ERASING A FLASH DATA
MEMORY ROW
PIC12F519
; LOAD ADDRESS OF ROW TO
; ERASE
;
; SELECT ERASE
; ENABLE WRITES
; INITITATE ERASE
DS41319B-page 21