MT18VDDT6472AG-26AG4 Micron Technology Inc, MT18VDDT6472AG-26AG4 Datasheet - Page 37

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MT18VDDT6472AG-26AG4

Manufacturer Part Number
MT18VDDT6472AG-26AG4
Description
MODULE SDRAM DDR 512MB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT18VDDT6472AG-26AG4

Memory Type
DDR SDRAM
Memory Size
512MB
Speed
266MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 24: Serial Presence-Detect Matrix – 2GB (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 35
NOTE:
pdf: 09005aef808a331f, source: 09005aef80858037
DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN
1. Value for -262 and -26A
2. The value of
3. The JEDEC SPD specification allows fast or slow slew rate values for these bytes. The worst-case (slow slew rate) value is
99-127
BYTE
36-40
46-61
46-61
65-71
73-90
95-98
represented here. Systems requiring the fast slew rate setup and hold values are supported, provided the faster mini-
mum slew rate is met.
34
35
41
42
43
44
45
47
62
63
64
72
91
92
93
94
Data/Data Mask Input Setup Time,
Data/Data Mask Input Hold Time,
Reserved
Min Active Auto Refresh Time,
Minimum Auto Refresh to Active/Auto Refresh
Command Period,
SDRAM Device Max Cycle Time,
SDRAM Device Max DQS-DQ Skew Time,
SDRAM Device Max Read Data Hold Skew Factor,
Reserved
DIMM Height
Reserved
SPD Revision
Checksum for Bytes 0-62
(Standard/Low-profile)
Manufacturer’s JEDEC ID Code
Manufacturer’s JEDEC ID Code
Manufacturing Location
Module Part Number (ASCII)
PCB Identification Code
Identification Code (Continued)
Year of Manufacture in BCD
Week of Manufacture in BCD
Module Serial Number
Manufacturer-Specific Data (RSVD)
t
RAS used for -262/-26A/-265 modules is calculated from
t
CK set to 7ns (0x70) for optimum BIOS compatibility. Actual device spec. vaule is 7.5ns.
t
RFC
DESCRIPTION
t
RC
t
CK
t
DH
t
MAX
DS
t
256MB, 512MB, 1GB, 2GB (x72, ECC, SR)
DQSQ
37
t
QHS
13ns (-262/-26A/-265/-202)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.75ns (-262/-26A/-265)
184-PIN DDR SDRAM RDIMM
0.50ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
Standard/Low-Profile
ENTRY (VERSION)
t
RC -
65ns (-26A/-265)
(Continued)
0.6ns (-202)
0.6ns (-202)
0.6ns (-202)
1.0ns (-202)
60ns (-262)
70ns (-202)
Release 1.0
t
MICRON
RP. Actual device spec value is 40 ns.
01–12
120ns
-26A
-262
-265
-202
1-9
0
©2004 Micron Technology, Inc. All rights reserved.
MT18VDDT25672
Variable Data
Variable Data
Variable Data
Variable Data
01–0C
CB/BC
BE/AF
10/01
28/19
01-09
F8/E9
A0
50
60
50
60
00
3C
41
46
78
34
32
3C
75
00
00
10
2C
00
FF

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