MT18VDDT6472AG-26AG4 Micron Technology Inc, MT18VDDT6472AG-26AG4 Datasheet - Page 14

• Manufacturer Part Number: MT18VDDT6472AG-26AG4
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDT6472AG-26AG4

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 266MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 12: I
DDR SDRAM components only
Notes: 1–5, 8, 10, 12; notes appear on pages 22–25; 0°C
pdf: 09005aef808a331f, source: 09005aef80858037
DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: One device bank; Active-Precharge;
(MIN);
clock cyle; Address and control inputs changing once every two clock
cycles
OPERATING CURRENT: One device bank; Active-Read Precharge; Burst
= 2;
I
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks
idle; Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
MIN; CKE = HIGH; Address and other control inputs changing once
per clock cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active;
Power-down mode;
CKE = LOW
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device
bank; Active-Precharge;
t
cycle; Address and other control inputs changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank
active; Address and control inputs changing once per clock cycle;
=
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device
bank active; Address and control inputs changing once per clock
cycle;
clock cycle
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE
OPERATING CURRENT: Four device bank interleaving READs (BL = 4)
with auto precharge,
t
Active READ, or WRITE commands
OUT
CK =
CK =
t
CK (MIN); I
t
= 0mA; Address and control inputs changing once per clock cycle
RC =
t
t
t
CK (MIN); DQ, DM and DQS inputs changing twice per clock
CK (MIN); Address and control inputs change only during
CK =
t
CK =
t
RC (MIN);
t
CK (MIN); DQ, DM, and DQS inputs changing twice per
t
CK (MIN); DQ, DM and DQS inputs changing once per
OUT
DD
IN
= 0mA
= V
t
Specifications and Conditions – 256MB
t
CK =
CK =
t
RC =
REF
t
RC =
t
CK =
for DQ, DQS, and DM
t
t
CK (MIN);
CK (MIN);
t
RC (MIN);
t
RAS (MAX);
t
0.2V
CK (MIN); CKE = (LOW)
t
t
REFC =
REFC = 15.625µs
256MB, 512MB, 1GB, 2GB (x72, ECC, SR)
t
RFC (MIN)
T
A
t
RC =
t
14
CK =
+70°C; V
t
RC
t
t
CK
CK
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
SYMBOL
= V
I
I
I
I
I
I
I
DD4W
I
I
DD3N
DD4R
I
DD5A
I
I
DD2P
DD2F
DD3P
DD
DD1
DD5
DD6
DD7
DD
0
Q = +2.5V ±0.2V
MAX
1,017
1,107
1,197
1,152
3,960
2,997
-262
810
450
900
54
90
54
-26A/
©2004 Micron Technology, Inc. All rights reserved.
-265/
1,107
1,152
1,107
3,960
2,952
-202
972
720
360
810
54
90
36
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
NOTES
21, 28,
21, 28,
20, 42
20, 42
20, 42
24, 44
24, 44
20, 43
44
45
44
41
20
9