MT18VDDT6472AG-26AG4 Micron Technology Inc, MT18VDDT6472AG-26AG4 Datasheet - Page 17

• Manufacturer Part Number: MT18VDDT6472AG-26AG4
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDT6472AG-26AG4

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 266MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

I
DDR SDRAM components only
Notes: 1–5, 8, 10, 12; notes appear on pages 22–25; 0°C
pdf: 09005aef808a331f, source: 09005aef80858037
DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: One device bank; Active-Precharge;
(MIN);
cyle; Address and control inputs changing once every two clock cycles
OPERATING CURRENT: One device bank; Active-Read Precharge; Burst =
4;
inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle;
Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
MIN; CKE = HIGH; Address and other control inputs changing once per
clock cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active;
Power-down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank;
Active-Precharge;
inputs changing twice per clock cycle; Address and other control inputs
changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank
active; Address and control inputs changing once per clock cycle;
t
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device
bank active; Address and control inputs changing once per clock cycle;
t
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE
OPERATING CURRENT: Four device bank interleaving READs (BL = 4) with
auto precharge,
inputs change only during Active READ, or WRITE commands
DD
CK (MIN); I
CK =
t
RC =
Specifications and Conditions – 2GB
t
CK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle
t
CK =
t
RC (MIN);
OUT
t
IN
CK (MIN); DQ, DM and DQS inputs changing once per clock
= V
= 0mA
t
RC =
t
REF
t
RC =
CK =
t
t
CK =
CK =
for DQ, DQS, and DM
t
RC (MIN);
t
RAS (MAX);
t
CK (MIN); I
t
t
CK (MIN); CKE = (LOW)
CK (MIN); CKE = LOW
0.2V
t
CK =
OUT
t
CK =
t
CK (MIN); Address and control
= 0mA; Address and control
t
CK (MIN); DQ, DM and DQS
t
t
REFC =
REFC = 7.8125µs
256MB, 512MB, 1GB, 2GB (x72, ECC, SR)
t
T
RFC (MIN)
A
t
RC =
t
17
CK =
+70°C; V
t
RC
t
t
CK =
CK
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
= V
SYMBOL
I
I
I
I
I
I
I
DD4W
DD
I
I
I
DD3N
DD5A
I
I
DD2P
DD2F
DD3P
DD4R
DD
DD
DD1
DD6
DD7
Q = +2.5V ±0.2V
0
5
1,215
1,485
1,530
1,440
5,220
3,645
-262
810
630
810
180
90
90
MAX
©2004 Micron Technology, Inc. All rights reserved.
-26A/
1,395
1,710
1,080
1,890
1,980
5,940
4,455
-265
180
540
810
180
162
UNITS NOTES
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
21, 28,
21, 28,
20, 42
20, 42
20, 42
24, 44
24, 44
20, 43
44
45
44
41
20
9