MT36HTJ51272Y-40EA2 Micron Technology Inc, MT36HTJ51272Y-40EA2 Datasheet - Page 6

• Manufacturer Part Number: MT36HTJ51272Y-40EA2
• Description: MODULE DDR2 4GB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36HTJ51272Y-40EA2

• Memory Type: DDR2 SDRAM
• Memory Size: 4GB
• Speed: 400MT/s
• Package / Case: 240-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 6:
Capacitance
I
Table 7:
PDF: 09005aef822553c2/Source: 09005aef822553af
HT36HTJ51272.fm - Rev. B 7/06 EN
Parameter/Condition
Operating one bank active-precharge current:
t
commands; Address bus inputs are switching; Data bus inputs are
switching
Operating one bank active-read-precharge current: I
BL = 4, CL = CL (I
MIN (I
commands; Address bus inputs are switching; Data pattern is same as
I
DD
DD
RC (I
V
Symbol
IN
V
4W
V
T
I
V
T
T
, V
DD
V
I
DD
case
Specifications
OPR
STG
OZ
DD
I
DD
REF
I
DD
OUT
Q
L
),
),
t
RAS =
t
RCD =
Parameter
V
V
V
Voltage on any pin relative to V
Storage temperature
DDR2 SDRAM device operating temperature (ambient)
Operating temperature (ambient)
Input leakage current; Any input 0V ≤ V
input 0V ≤ V
0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
Absolute Maximum DC Ratings
DDR2 I
Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the 1Gb
(256 Meg x 4) component data sheet
DD
DD
DD
REF
DD
t
Q supply voltage relative to V
L supply voltage relative to Vss
RAS MIN (I
supply voltage relative to V
leakage current; V
t
RCD (I
), AL = 0;
DD
DD
IN
Specifications and Conditions – 4GB
); CKE is HIGH, S# is HIGH between valid
≤0.95V; (All other pins not under test =
Stresses greater than those listed in Table 6 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
At DDR2 data rates, Micron encourages designers to simulate the performance of the
module to achieve optimum values. When inductance and delay parameters associated
with trace lengths are used in simulations, they are significantly more accurate and real-
istic than a gross estimation of module capacitance. Simulations can then render a
considerably more accurate result. JEDEC modules are now designed by using simula-
tions to close timing budgets.
DD
t
CK =
); CKE is HIGH, S# is HIGH between valid
t
CK (I
REF
= Valid V
DD
),
t
OUT
RC =
SS
SS
SS
≤ V
REF
t
RC (I
DD
t
level
CK =
IN
Q; DQs and
4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
≤ V
DD
t
),
DD
OUT
CK (I
t
; V
RAS =
6
= 0mA;
REF
DD
),
t
t
RAS
Command/Address,
RAS#, CAS#, WE# S#,
CKE
CK, CK#
DQ, DQS, DQS#
RC =
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
I
I
DD
DD
0
1
a
a
1,746
1,926
-667
Electrical Specifications
Min
–1.0
–0.5
–0.5
–0.5
–55
–10
–10
–72
–5
©2003 Micron Technology, Inc. All rights reserved.
0
0
1,566
1,836
-53E
Max
100
2.3
2.3
2.3
2.3
85
65
10
10
72
5
1,386
1,566
-40E
Units
Units
µA
µA
µA
°C
°C
°C
mA
mA
V
V
V
V