MT36HTJ51272Y-40EA2 Micron Technology Inc, MT36HTJ51272Y-40EA2 Datasheet - Page 10

• Manufacturer Part Number: MT36HTJ51272Y-40EA2
• Description: MODULE DDR2 4GB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36HTJ51272Y-40EA2

• Memory Type: DDR2 SDRAM
• Memory Size: 4GB
• Speed: 400MT/s
• Package / Case: 240-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 11:
Serial Presence-Detect
Table 12:
PDF: 09005aef822553c2/Source: 09005aef822553af
HT36HTJ51272.fm - Rev. B 7/06 EN
Parameter
Parameter/Condition
Stabilization time
Input clock slew rate
SSC modulation frequency
SSC clock input frequency deviation
PLL loop bandwidth (–3dB from unity gain)
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output low voltage: I
Input leakage current: V
Output leakage current: V
Standby current
Power supply current, READ: SCL clock frequency = 100 KHz
Power supply current, WRITE: SCL clock frequency = 100 KHz
PLL Clock Driver Timing Requirements and Switching Characteristics
Note: 1
Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
Notes:
OUT
IN
= 3mA
OUT
= GND to V
1. PLL specifications are critical for proper operation of the DDR2 DIMM. This is a subset of
2. Static phase offset does not include jitter.
3. Period jitter and half-period jitter specifications are separate specifications that must be
4. Design target is 60ps, unless it is not achievable.
5. V
6. The output slew rate is determined from the IBIS model:
= GND to V
parameters for the specific PLL used. Detailed PLL information is available in JEDEC Stan-
dard JESD82.
met independently of each other.
OX
CU877
specified at the DRAM clock input, or the test load.
GND
V
DD
DD
SS
DD
; V
DDSPD
V
V
CK
CK
= +1.7V to +3.6V
R = 60
R = 60
4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
10
V
2
DD
Symbol
V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
DDSPD
V
I
Symbol
CC W
V
V
I
I
CC R
I
LO
SB
OL
LI
IH
IL
t
LS
t
L
I
V
DDSPD
Min
V
–0.6
0.10
0.05
0°C ≤ T
1.7
1.6
0.4
Min
2
–
DD
1.0
0.0
2.0
30
–
× 0.7
= +1.8V ±0.1V
Serial Presence-Detect
OPR
©2003 Micron Technology, Inc. All rights reserved.
≤ +55°C
V
V
DDSPD
DDSPD
–0.50
Max
Max
15
33
4
–
3.6
0.4
3
3
4
1
3
+ 0.5
× 0.3
Units
MHz
V/ns
KHz
Units
µs
%
mA
mA
µA
µA
µA
V
V
V
V