MT16LSDT3264AG-13EG3 Micron Technology Inc, MT16LSDT3264AG-13EG3 Datasheet - Page 23

• Manufacturer Part Number: MT16LSDT3264AG-13EG3
• Description: MODULE SDRAM 256MB 168-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDT3264AG-13EG3

• Memory Type: SDRAM
• Memory Size: 256MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 22: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
NOTE:
09005aef80bccbe7
SD8_16C16_32x64AG.fm - Rev. E 12/05 EN
99–125 Manufacturer-Specific Data (RSVD)
1. The value of
36–40 Reserved Bytes
42–61 Reserved Bytes
73–90 Module Part Number (ASCII)
95–98 Module Serial Number
BYTE
65-71
126
127
33
34
35
41
62
63
64
72
91
92
93
94
Command Address Hold,
Data Signal Input Setup,
Data Signal Input Hold,
Device Minimum Active/Auto-Refresh Time,
SPD Revision
Checksum For Bytes 0-62
Manufacturer's JEDEC ID Code
Manufacturer's JEDEC Code (Cont.)
Manufacturing Location
PCB Identification Code
Year of Manufacture in BCD
Week of Manufacture in BCD
System Frequency
Year of Manufacture in BCD
Identification Code (Continuted)
t
RAS used for the -13E module is calculated from
DESCRIPTION
t
DH
t
t
DS
AH
t
RC
ENTRY(VERSION)
23
(-13E/-133, -10E)
128MB (x64, SR), 256MB (x64, DR)
0.8 (-13E/-133)
1.5 (-13E/-133)
0.8 (-13E/-133)
60ns (-13E)
66ns (-133)
70ns (-10E)
100 MHz
MICRON
1 (-10E)
2 (-10E)
1 (-10E)
REV.2.0
t
00–12
RC -
(-13E)
(-133)
(-10E)
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RP. Actual device spec. vaule is 37ns.
168-PIN SDRAM UDIMM
MT8LSDT1664AG MT16LSDT3264AG
Variable Data
Variable Data
Variable Data
Variable Data
Variable Data
00–0C
AF
08
10
15
20
08
10
00
3C
42
46
00
02
94
E0
2C
2C
00
64
FF
©2003, 2004 Micron Technology, Inc. All rights reserved.
Variable Data
Variable Data
Variable Data
Variable Data
Variable Data
00–0C
2D
08
10
15
20
08
10
00
3C
42
46
00
12
95
E1
2C
00
64
FF
FF