MT16LSDT3264AG-13EG3 Micron Technology Inc, MT16LSDT3264AG-13EG3 Datasheet - Page 11

• Manufacturer Part Number: MT16LSDT3264AG-13EG3
• Description: MODULE SDRAM 256MB 168-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDT3264AG-13EG3

• Memory Type: SDRAM
• Memory Size: 256MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

because unknown operation or incompatibility with
future versions may result.
Write Burst Mode
M2 applies to both read and write bursts; when M9 = 1,
the programmed burst length applies to read bursts,
but write accesses are single-location (nonburst)
accesses.
09005aef80bccbe7
SD8_16C16_32x64AG.fm - Rev. E 12/05 EN
Test modes and reserved states should not be used
When M9 = 0, the burst length programmed via M0-
11
128MB (x64, SR), 256MB (x64, DR)
Table 8:
SPEED
-13E
-133
-10E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
168-PIN SDRAM UDIMM
CAS Latency Table
CAS LATENCY = 2
CLOCK FREQUENCY (MHZ)
≤ 133
≤ 100
≤ 100
ALLOWABLE OPERATING
©2003, 2004 Micron Technology, Inc. All rights reserved.
CAS LATENCY = 3
≤ 143
≤ 133
≤ 125