MT9LSDT1672AY-133G3 Micron Technology Inc, MT9LSDT1672AY-133G3 Datasheet - Page 14

• Manufacturer Part Number: MT9LSDT1672AY-133G3
• Description: MODULE SDRAM 128MB 168-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9LSDT1672AY-133G3

• Memory Type: SDRAM
• Memory Size: 128MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 72b
• Organization: 16Mx72
• Total Density: 128MByte
• Chip Density: 128Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.35A
• Number Of Elements: 9
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 12: I
Notes: 1, 5, 6, 11, 13; notes appear on page 18; V
Table 13: I
Notes: 1, 5, 6, 11, 13; notes appear on page 18; V
09005aef807b3709
SD9_18C16_32x72AG.fm - Rev. E 6/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
STANDBY CURRENT: Power-Down Mode; All device banks idle;
CKE = LOW
STANDBY CURRENT: Active Mode;CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
PARAMETER/CONDITION
NOTE:
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
STANDBY CURRENT: Power-Down Mode; All device banks idle;
CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
RC =
RC =
a - Value calculated as one module rank in this condition, and all other module ranks in Power-Down Mode (I
b - Value calculated reflects all module ranks in this condition.
t
t
RC (MIN)
RC (MIN)
DD
DD
Specifications and Conditions – 128MB
Specifications and Conditions – 256MB
t
t
RCD met; No accesses in progress
RCD met; No accesses in progress
128MB (x72, ECC, SR), 256MB (x72, ECC, DR)
t
t
Standard
Low Power
t
t
Standard
Low Power
RFC =
RFC = 15.625µs
RFC =
RFC = 15.625µs
DD
DD
, V
, V
t
t
RFC (MIN)
RFC (MIN)
DD
DD
Q = +3.3V ±0.3V; SDRAM component values only
Q = +3.3V ±0.3V; SDRAM component values only
14
SYMBOL
SYMBOL
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
I
DD
DD
DD
DD
DD
DD
DD
1
2
3
4
5
6
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
2
3
4
5
6
7
b
b
b
b
a
a
a
1,458 1,368 1,278
1,503 1,368 1,278
5,940 5,580 4,860
1,125 1,035
1,350 1,260 1,080
2,070 1,890 1,710
-13E
-13E
468
405
36
54
36
27
18
27
18
9
168-PIN SDRAM UDIMM
MAX
MAX
-133 -10E
-133 -10E
468
405
36
54
36
27
18
27
18
9
378
855
315
36
54
36
27
18
27
18
9
UNITS
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
©2004 Micron Technology, Inc.
18, 19, 30, 31
18, 19, 30, 31
3, 18, 19, 30
3, 12, 19, 30
3, 18, 19, 30
3, 18, 19, 30
3, 12, 19, 30
3, 18, 19, 30
NOTES
NOTES
3, 12
3, 12
DD 2
30
30
4
4
4
4
).