NCP5378MNR2G ON Semiconductor, NCP5378MNR2G Datasheet - Page 6

• Manufacturer Part Number: NCP5378MNR2G
• Description: IC CTLR 1PH SYNC BUCK 32QFN
• Manufacturer: ON Semiconductor

Specifications of NCP5378MNR2G

• Applications: Controller, Power Supplies for Next-Generation Intel Processors
• Voltage - Input: 4.3 ~ 7 V
• Number Of Outputs: 1
• Voltage - Output: 0.5 ~ 1.6 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 32-TFQFN Exposed Pad
• Output Voltage: 0.075 V to 3 V
• Output Current: 2 mA
• Input Voltage: - 0.3 V to + 3 V
• Operating Temperature Range: 0 C to + 70 C
• Mounting Style: SMD/SMT
• Isolated/non-isolated: Non Isolated
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
0°C < T
3. Guaranteed by design.
4. For propagation delays, “tpdh” refers to the specified signal going high “tpdl” refers to it going low. Reference Gate Timing Diagram.
VDROOP AMPLIFIER
CSSUM AMPLIFIER
CURRENT SENSE AMPLIFIERS
IMON
RPM THRESHOLD
VR_RDY (Power Good) OUTPUT
Open Loop Phase Margin
Slew Rate
Maximum Output Voltage
Minimum Output Voltage
Output Source Current
Output Sink Current
Current Sense Input to V
Current Summing Amp Output Offset Voltage
Maximum CSSUM Output Voltage
Minimum CSSUM Output Voltage
Output Source Current
Output Sink Current
Input Bias Current
Common Mode Input Voltage Range
Differential Mode Input Voltage Range
Current Sharing Offset CSP to CSN (Note 3)
Current Sense Input to CSSUM Gain
V
Current Sense Input to V
Output Referred Offset Voltage
Minimum Output Voltage
Maximum Output Voltage
Output Sink Current
Maximum Clamp Voltage
Ramp Slope (Note 3)
R
VR_RDY Output Saturation Voltage
VR_RDY Rise Time
DRP
OSC
to IMON Gain
Output
A
< 70°C; 0°C < T
Parameter
J
DRP
DRP
< 125°C; 4.75 < V
−3 dB Bandwidth
−3 dB Bandwidth
CC
< 5.25 V; All DAC Codes; C
C
R
C
R
10 mV of Overdrive, I
10 mV of Overdrive, I
10 mV of Overdrive, V
10 mV of Overdrive, V
C
R
CSP − CSN = 0, CSP = 1.1 V
CSP − CSN = −0.2 V
(all phases) I
CSP − CSN = 0.7 V
(all phases) I
V
V
CSP = CSN = 1.4 V
all VIOS
0 V < CSP − CSN < 0.1 V
1.325 V > V
C
R
V
V
I
V
IMON − VSN V
R
R
I
External pull−up of 1 KW to 1.25 V,
C
out
PGD
out
out
DRP
DRP
out
L
L
L
L
L
L
L
L
LOAD
OSC
TOT
http://onsemi.com
= 20 pF to GND including ESD
= 1 kW to GND
= 20 pF to GND including ESD
= 1 kW to GND
= 10 pF to GND,
= 10 kW to GND
= 30 pF to GND,
= 100 kW to GND
= 300 mA
= 3.0 V
= 0.3 V
= 0.3 V
= 5 mA
= 1.5 V, I
= 1.3 V, I
= 45 pF, DVo = 10% to 90%
= 69.8 kW, DAC = 1.1 V
= Open
Test Conditions
DRP
SOURCE
SINK
6
SOURCE
SINK
DRP
> 1.75 V
= 1 mA
= HIGH
= 25 mA
SOURCE
VCC
SINK
= 1 mA
out
out
= 0 mA
= 3.0 V
= 1.0 V
= 0.1 mF unless otherwise noted.
= 1.0 mA
= 4.0 mA
−3.834
1.965
−120
−0.3
1.93
Min
−16
−50
175
3.0
4.0
1.0
3.0
1.0
4.0
1.0
1.1
−2
−
−
−
−
−
−
0
−
−
−
0.175
−3.7
2.00
Typ
100
4.0
70
10
12
23
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−3.574
Max
2.02
2.05
120
250
1.0
0.3
2.0
0.1
1.2
0.4
+5
50
50
−
−
−
−
−
−
−
−
−
2
−
−
−
MHz
MHz
V/ms
V/ms
Unit
V/V
V/V
mA
mA
mV
mA
mA
mV
mV
mV
nA
mA
ns
V
V
V
V
V
V
V
V
V
V
°