CY14B101K-SP35XIT Cypress Semiconductor Corp, CY14B101K-SP35XIT Datasheet - Page 19

• Manufacturer Part Number: CY14B101K-SP35XIT
• Description: IC NVSRAM 1MBIT 35NS 48SSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B101K-SP35XIT

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1M (128K x 8)
• Speed: 35ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-SSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AC Switching Characteristics
Notes
Document Number: 001-06401 Rev. *J
t
t
t
t
t
t
t
t
t
t
16. If WE is Low when CE goes Low, the outputs remain in the High Impedance State.
17. CE or WE are greater than V
WC
PWE
SCE
SD
HD
AW
SA
HA
HZWE
LZWE
SRAM Write Cycle
Parameter
Cypress
[13]
[13, 16]
Parameter
ADDRESS
DATA OUT
ADDRESS
DATA IN
DATA OUT
DATA IN
CE
WE
WE
CE
t
t
t
t
t
t
t
t
t
t
AVAV
WLWH,
ELWH,
DVWH,
WHDX,
AVWH,
AVWL,
WHAX,
WLQZ
WHQX
Parameter
Alt.
t
t
t
t
t
t
t
ELEH
AVEL
AVEH
DVEH
EHDX
EHAX
WLEH
IH
during address transitions.
Write Cycle Time
Write Pulse Width
Chip Enable To End of Write
Data Setup to End of Write
Data Hold After End of Write
Address Setup to End of Write
Address Setup to Start of Write
Address Hold After End of Write
Write Enable to Output Disable
Output Active After End of Write
PREVIOUS DATA
Figure 10. SRAM Write Cycle 1: WE Controlled
t
SA
t
SA
Figure 11. SRAM Write Cycle 2: CE Controlled
Description
(continued)
HIGH IMPEDANCE
t
t
t
AW
AW
t
PWE
HZWE
t
SCE
t
t
SCE
WC
t
WC
Min
25
20
20
10
20
3
0
0
0
t
HIGH IMPEDANCE
PWE
t
25 ns
DATA VALID
SD
DATA VALID
t
SD
Max
10
Min
[15, 17]
35
25
25
12
25
0
0
0
3
t
t
HA
t
35 ns
HD
HA
t
HD
Max
13
t
LZWE
Min
45
30
30
15
30
0
0
0
3
CY14B101K
45 ns
Max
15
Page 19 of 29
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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