CY14B101K-SP35XIT Cypress Semiconductor Corp, CY14B101K-SP35XIT Datasheet - Page 17

• Manufacturer Part Number: CY14B101K-SP35XIT
• Description: IC NVSRAM 1MBIT 35NS 48SSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14B101K-SP35XIT

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1M (128K x 8)
• Speed: 35ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-SSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Retention and Endurance
Capacitance
These parameters are guaranteed but not tested.
Thermal Resistance
These parameters are guaranteed but not tested.
AC Test Conditions
Input Pulse Levels ..................................................0 V to 3 V
Input Rise and Fall Times (10% - 90%)........................ <5 ns
Input and Output Timing Reference Levels ................... 1.5 V
Document Number: 001-06401 Rev. *J
C
C
DATA
NV
Parameter
Parameter
Parameter
IN
OUT
C
Θ
Θ
R
JA
JC
OUTPUT
Thermal Resistance (junction to
ambient)
Thermal Resistance (junction to case)
Data Retention
Nonvolatile STORE Operations
Input Capacitance
Output Capacitance
3.0V
30 pF
Description
Description
R1 577Ω
Description
789Ω
R2
Figure 7. AC Test Loads
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, in accordance with EIA/JESD51.
T
A
= 25°C, f = 1 MHz, V
OUTPUT
Test Conditions
Test Conditions
3.0V
CC
5 pF
= 0 to 3.0 V
R1 577Ω
48-SSOP
For Tri-state Specs
789Ω
34.85
16.35
Max
Min
200
20
R2
7
7
CY14B101K
Page 17 of 29
Years
°C/W
°C/W
Unit
Unit
Unit
pF
pF
K
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