MT48H8M32LFB5-75:H TR Micron Technology Inc, MT48H8M32LFB5-75:H TR Datasheet - Page 18

• Manufacturer Part Number: MT48H8M32LFB5-75:H TR
• Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-75:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Partial-Array Self Refresh (PASR)
Driver Strength
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
1. All banks (banks 0, 1, 2, and 3).
2. Two banks (banks 0 and 1; BA1 = 0).
3. One bank (bank 0; BA1 = BA0 = 0).
4. Half bank (bank 0; BA1 = BA0 = row address MSB = 0).
5. Quarter bank (bank 0; BA1 = BA0; row address MSB = row address MSB -1 = 0).
For further power savings during self refresh, the partial-array self refresh (PASR) feature
allows the controller to select the amount of memory that will be refreshed during self
refresh. The following refresh options are available.
WRITE and READ commands occur to any bank selected during standard operation, but
only the selected banks in PASR will be refreshed during self refresh. It is important to
note that data in banks 2 and 3 will be lost when the two-bank option is used.
Bits E5 and E6 of the EMR can be used to select the driver strength of the DQ outputs.
This value should be set according to the application’s requirements.
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile SDRAM
©2006 Micron Technology, Inc. All rights reserved.
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