MT48LC8M16A2P-75:G Micron Technology Inc, MT48LC8M16A2P-75:G Datasheet - Page 67

IC SDRAM 128MBIT 133MHZ 54TSOP

MT48LC8M16A2P-75:G

Manufacturer Part Number
MT48LC8M16A2P-75:G
Description
IC SDRAM 128MBIT 133MHZ 54TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr

Specifications of MT48LC8M16A2P-75:G

Memory Type
SDRAM
Format - Memory
RAM
Memory Size
128M (8Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Memory Configuration
16M X 8
Access Time
5.4ns
Page Size
128Mbit
Memory Case Style
TSOP
No. Of Pins
54
Operating Temperature Range
0°C To +70°C
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC8M16A2P-75:G
Manufacturer:
MICRON
Quantity:
8
Part Number:
MT48LC8M16A2P-75:G
Manufacturer:
MICRON
Quantity:
8 000
Part Number:
MT48LC8M16A2P-75:G
Manufacturer:
MICRON
Quantity:
20 000
Figure 52:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. M 10/07 EN
DQML, DQMH
A0–A9, A11
COMMAND
BA0, BA1
DQM /
CKE
CLK
A10
DQ
WRITE – Full-Page Burst
t CMS
t CKS
Notes:
t AS
t AS
t AS
ACTIVE
BANK
ROW
ROW
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
1. x16: A8, A9 and A11 = “Don’t Care”
2.
3. Page left open; no
t CL
x8: A9 and A11 = “Don’t Care”
x4: A11 = “Don’t Care”
t
WR must be satisfied prior to PRECHARGE command.
T1
NOP
t CH
t CMS
t CK
COLUMN m 1
t DS
D
T2
WRITE
BANK
IN
t CMH
t DH
m
t
RP.
t DS
D
IN
T3
NOP
m + 1
t DH
67
1,024 (x4) locations within same row
256 (x16) locations within same row
512 (x8) locations within same row
t DS
D
IN
T4
NOP
m + 2
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Full page completed
t DS
D
IN
T5
NOP
m + 3
t DH
(
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(
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)
(
(
(
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(
(
(
(
(
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(
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(
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(
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(
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(
(
(
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)
64Mb: x4, x8, x16 SDRAM
t DS
Tn + 1
D
IN
NOP
m - 1
t DH
Full-page burst does
not self-terminate. Can
use BURST TERMINATE
command to stop.
©2000 Micron Technology, Inc. All rights reserved.
Timing Diagrams
t DS
BURST TERM
Tn + 2
t DH
2, 3
DON’T CARE
Tn + 3
NOP

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