MT48LC8M16A2P-75:G Micron Technology Inc, MT48LC8M16A2P-75:G Datasheet - Page 45

IC SDRAM 128MBIT 133MHZ 54TSOP

MT48LC8M16A2P-75:G

Manufacturer Part Number
MT48LC8M16A2P-75:G
Description
IC SDRAM 128MBIT 133MHZ 54TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr

Specifications of MT48LC8M16A2P-75:G

Memory Type
SDRAM
Format - Memory
RAM
Memory Size
128M (8Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Memory Configuration
16M X 8
Access Time
5.4ns
Page Size
128Mbit
Memory Case Style
TSOP
No. Of Pins
54
Operating Temperature Range
0°C To +70°C
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC8M16A2P-75:G
Manufacturer:
MICRON
Quantity:
8
Part Number:
MT48LC8M16A2P-75:G
Manufacturer:
MICRON
Quantity:
8 000
Part Number:
MT48LC8M16A2P-75:G
Manufacturer:
MICRON
Quantity:
20 000
Table 14:
Table 15:
Table 16:
Table 17:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. M 10/07 EN
Parameter/Condition
Parameter/Condition
Parameter
Parameter
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
Output leakage current: DQs are disabled; 0V ≤ V
Output levels:
Output high voltage (Iout = –4mA)
Output low voltage (Iout = 4mA)
Operating current: active mode;
Burst = 2; READ or WRITE;
Standby current: Power-down mode;
All banks idle; CKE = LOW
Standby current: Active mode;
CKE = HIGH; CS# = HIGH; All banks active after
No accesses in progress
Operating current: Burst mode;
Page burst; READ or WRITE; All banks active
Auto refresh current:
CKE = HIGH; CS# = HIGH
Self refresh current:
CKE ≤ 0.2V
Input capacitance: CLK
Input capacitance: All other input-only pins
Input/output capacitance: DQs
Input capacitance: CLK
Input capacitance: All other input-only pins
Input/output capacitance: DQs
DC Electrical Characteristics and Operating Conditions
Notes 1, 5, 6 apply to entire table; notes appear on pages 48 and 49; V
I
Notes 1, 5, 6 apply to entire table; notes appear on pages 48 and 49; V
TSOP Capacitance
Note 2 applies to entire table; notes appear on pages 48 and 49
VFBGA Capacitance
Note 2 applies to entire table; notes appear on pages 48 and 49
DD
IN
Specifications and Conditions
≤ V
DD
(All other pins not under test = 0V)
t
RC ≥
t
RC (MIN)
t
t
Standard
Low power (L)
RFC =
RFC = 15.625µs
t
RCD met;
OUT
t
≤ V
RFC (MIN)
DD
Q
45
V
Symbol
DD
Symbol
Symbol
Symbol
V
V
V
, V
I
I
I
I
I
I
I
I
V
OZ
DD
DD
DD
DD
DD
DD
DD
OH
I
OL
IH
C
C
C
C
C
C
IL
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
I
I
IO
I
I
IO
1
2
3
4
5
6
7
1
2
1
2
Q
150
180
250
0.5
60
-6
2
3
1
Min
Min
Min
–0.3
TBD
TBD
TBD
2.4
2.5
2.5
4.0
–5
–5
3
2
DD
DD
Max
125
150
230
, V
, V
-7E
0.5
64Mb: x4, x8, x16 SDRAM
45
2
3
1
Electrical Specifications
DD
V
DD
DD
Max
Max
Max
Q = +3.3V ±0.3V
Q = +3.3V ±0.3V
TBD
TBD
TBD
3.6
0.8
0.4
3.5
3.8
6.0
5
5
+ 0.3
©2000 Micron Technology, Inc. All rights reserved.
115
140
210
-75
0.5
45
2
3
1
Units
Units
Units
Units
µA
µA
pF
pF
pF
pF
pF
pF
mA
mA
mA
mA
mA
mA
V
V
V
V
V
19, 32, 33
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
Notes
Notes
Notes
Notes
22
22
32
32
32
32
29
30
31
29
30
31
4

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