ASI4001_10 ASI [Advanced Semiconductor], ASI4001_10 Datasheet
ASI4001_10
Manufacturer Part Number
ASI4001_10
Description
NPN SILICON RF POWER TRANSISTOR
Manufacturer
ASI [Advanced Semiconductor]
Datasheet
1.ASI4001_10.pdf
(1 pages)
CHARACTERISTICS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
DESCRIPTION:
The
Purpose Calss C Power Amplifier
Applications up to 4200 MHz.
FEATURES:
• P
• Hermetic Microstrip Package
• Omnigold™ Metalization System
MAXIMUM RATINGS
P
T
SYMBOL
V
θ
T
DISS
I
STG
G
CC
JC
C
BV
BV
BV
J
ASI 4001
I
C
= 5 dB min. at 1.0 W / 4,000 MHz
h
CBO
P
η
FE
OB
CBO
EBO
CER
G
C
NPN SILICON RF POWER TRANSISTOR
7.0 W @ T
-65
-65
I
I
I
V
V
V
V
C
C
E
is Designed for General
CB
CE
CB
CC
= 1.0 mA
= 5.0 mA
= 10 mA
O
O
25
= 28 V
= 5.0 V
= 28 V
= 28 V
C to +200
C to +200
0.25 A
30 V
O
C/W
C
NONETEST CONDITIONS
T
= 25
C
= 25
O
O
O
C
C
O
C
C
I
P
C
R
OUT
= 100 mA
BE
= 10 Ω
= 1.0 W
Specifications are subject to change without notice.
f = 4.0 GHz
f = 1.0 MHz
1 = Collector
PACKAGE STYLE .250 2L FLG
MINIMUM TYPICAL MAXIMUM
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
ORDER CODE: ASI10542
3.5
5.0
45
45
15
25
B
.740 / 18.80
.790 / 20.07
.560 / 14.22
C
.028 / 0.71
.245 / 6.22
.128 / 3.25
.110 / 2.79
.225 / 5.72
.165 / 4.19
.003 / 0.08
.058 / 1.47
.119 / 3.02
.149 / 3.78
MINIMUM
inches / mm
L
E
G
ØD
2&3 = Base
2
H
.125 / 3.18
.117 / 2.97
J
4
K
F
I
1
A
3
.570 / 14.48
.810 / 20.57
MAXIMUM
.032 / 0.81
.255 / 6.48
.132 / 3.35
.117 / 2.97
.235 / 5.97
.185 / 4.70
.007 / 0.18
.068 / 1.73
.135 / 3.43
.187 / 4.75
inches / mm
M
CHAMFER
.060 x 45°
N
120
3 = Emitter
0.5
3.5
P
ASI4001
UNITS
mA
dB
REV. B
pF
---
%
V
V
V
1/1
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