MRF890_07 ASI [Advanced Semiconductor], MRF890_07 Datasheet

MRF890_07

Manufacturer Part Number

MRF890_07

Description

NPN SILICON RF POWER TRANSISTOR

Manufacturer

ASI [Advanced Semiconductor]

Datasheet

1.MRF890_07.pdf (1 pages)

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A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

DESCRIPTION:

The

UHF Class A Amplifier Applications in

Cellular Base Station Equipment.

FEATURES:

• Pg = 9.0 dB min. @ 900 MHz

• P

• Omnigold™ Metalization System

MAXIMUM RATINGS

CHARACTERISTICS

SYMBOL

CBO

DISS

CER

EBO

STG

1dB

ASI MRF890

CBO

= 2.0 Watts min. at 900 MHz

CEO

CES

EBO

NPN SILICON RF POWER TRANSISTOR

7.0 W @ T

-65 °C to +200 °C

-65 °C to +150 °C

= 5.0 mA

= 30 V

= 5.0 V

= 30 V

= 24 V

is Designed for

0.5 A

4.0 V

55 V

30 V

C/W

NONETEST CONDITIONS

= 25 °C

OUT

= 100 mA

= 2.0 V

Specifications are subject to change without notice.

f = 900 MHz

f = 1.0 MHz

D IM

PACKAGE STYLE .205 4L STUD

MINIMUM TYPICAL MAXIMUM

4.0

9.0

.976 / 24.800

.425 / 10.800

1 = Collector 2 = Emitter 3 = Base

.028 / 0.700

.161 / 4.100

.098 / 2.500

.200 / 5.100

.004 / 0.100

.200 / 5.100

M IN IM U M

inches / m m

.138 / 3.500

#8-32U NC

1.000 / 25.4000

.465 / 11.800

.031 / 0.800

.196 / 5.000

.110 / 2.800

.208 / 5.300

.006 / 0.150

2.05 / 5.200

M AX IM U M

inches / m m

500

100

2.0

MRF890

UNITS

µA

REV. B

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