HSCH-5315 ASI [Advanced Semiconductor], HSCH-5315 Datasheet
HSCH-5315
Manufacturer Part Number
HSCH-5315
Description
BATCH MATCHED BEAM LEAD SCHOTTKY DIODE
Manufacturer
ASI [Advanced Semiconductor]
Datasheet
1.HSCH-5315.pdf
(1 pages)
CHARACTERISTICS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
DESCRIPTION:
The
Beam Lead Schottky Diode Designed
for X-Band Mixer Applications that is
Batch Matched for NF and ZIF.
MAXIMUM RATINGS
P
SYMBOL
T
V
T
DISS
I
STG
F
R
J
HSCH5315
V
NF
R
V
C
Z
NF
BR
Z
IF
D
F
T
IF
300 mW @ T
-65
-65
I
I
I
V
I
P
N
R
F
F
F
R
LO
IF
= 30 MHz
= 10 A
= 1.0 mA
= 5.0 mA
O
O
= 0 V
= 1.5 dB
is a Medium Barrier
= 0 dBm
C to +175
C to +200
25 mA
4.0 V
BEAM LEAD SCHOTTKY DIODE
TEST CONDITIONS
A
T
= 25
C
= 25
O
O
C
C
DC Load = 0
O
O
C
C
BATCH MATCHED
Specifications are subject to change without notice.
f = 9.375 GHz
f = 1.0 MHz
MINIMUM
200
4.0
ORDER CODE: ASI30264
PACKAGE STYLE BL1
TYPICAL
NONE
MAXIMUM
0.15
±0.3
500
400
7.2
HSCH5315
18
25
UNITS
REV. A
1/1
mV
dB
dB
pF
V
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