VFT150-28 ASI [Advanced Semiconductor], VFT150-28 Datasheet
VFT150-28
Manufacturer Part Number
VFT150-28
Description
VHF POWER MOSFET Channel Enhancement Mode
Manufacturer
ASI [Advanced Semiconductor]
Datasheet
1.VFT150-28.pdf
(1 pages)
DESCRIPTION:
The
Purpose Class B Power Amplifier
Applications up to 175 MHz.
FEATURES:
MAXIMUM RATINGS
CHARACTERISTICS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
P
V
T
P
10:1 Load VSWR Capability
Omnigold™ Metalization System
SYMBOL
V
T
DISS
I
DSS
STG
G
GS
D
JC
J
BV
V
VFT150-28
= 10 dB Typical at 175 MHz
C
I
I
C
C
GS(th)
g
P
DSS
GSS
oss
iss
rss
fs
DSS
G
D
300 W @ T
-65
-65
I
V
V
I
I
V
V
V
D
D
D
DS
DS
DS
DD
SWR
= 100 mA
= 100 mA
= 5 A
O
O
is Designed for General
0.6
= 28 V
= 28 V
= 0 V
= 28 V
C to +200
C to +150
= 10:1
16 A
65 V
40 V
O
C/W
C
N-Channel Enhancement Mode
T
= 25
C
AT ALL PHASE ANGLES
TEST CONDITIONS
= 25
O
O
V
V
V
V
V
C
C
O
I
O
DQ
GS
GS
DS
DS
GS
C
C
VHF POWER MOSFET
= 250 mA
= 0 V
= 20 V
= 10 V
= 10 V
= 0 V
Specifications are subject to change without notice.
P
f = 1.0 MHz
f = 175 MHz
out
= 150 W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
PACKAGE STYLE .500 4L FLG
MINIMUM TYPICAL MAXIMUM
ORDER CODE: ASI 10700
3500
1.0
8.5
60
50
FULL R
.720 / 18.28
.970 / 24.64
.495 / 12.57
.980 / 24.89
H
.220 / 5.59
.003 / 0.08
.090 / 2.29
.245 / 6.22
.150 / 3.81
C
MINIMUM
i n c h e s / m m
E
B
NO DEGRADATION IN OUTPUT POWER
A
S
G
.112x45°
D
.125 / 3.18
.125 / 3.18
G
375
190
25
10
60
NONE
F
S
L
D
1.050 / 26.67
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
I
MAXIMUM
.230 / 5.84
.255 / 6.48
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
i n c h e s / m m
J
VFT150-28
K
Ø.125 NOM.
5.0
1.0
5.0
1/1
REV. A
UNITS
mA
mS
dB
pF
V
V
%
A
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