VFT300-28_07 ASI [Advanced Semiconductor], VFT300-28_07 Datasheet
VFT300-28_07
Manufacturer Part Number
VFT300-28_07
Description
VHF POWER MOSFET
Manufacturer
ASI [Advanced Semiconductor]
Datasheet
1.VFT300-28_07.pdf
(1 pages)
DESCRIPTION:
The
Wideband High Power VHF Amplifier
Applications operating up to 250 MHz.
FEATURES:
• P
• η
• Omnigold™ Metalization System
MAXIMUM RATINGS
CHARACTERISTICS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
V
V
P
SYMBOL
(BR)DSS
T
V
θ
D
T
G
V
I
DGR
DISS
STG
GS
JC
D
VFT300-28
J
(BR)DSS
= 55% Typ. at P
C
= 14 dB Typical at 175 MHz
I
C
G
I
V
V
G
C
DSS
GSS
η
oss
GS
DS
rss
iss
PS
FS
D
500 W @ T
-65 °C to +200 °C
-65 °C to +150 °C
V
V
V
V
V
V
V
V
f = 175 MHz
GS
DS
DS
DS
GS
DS
GS
DD
is Designed for
0.35 °C/W
= 0 V
= 28 V
= 0 V
= 10 V
= 10 V
= 10 V
= 28 V
= 28 V
± 40 V
OUT
16 A
65 V
65 V
Silicon N-Channel Enhancement Mode
C
= 300 Watts
T
NONETEST CONDITIONS
C
= 25 °C
= 25 °C
I
DQ
VHF POWER MOSFET
= 2 x 250 mA
I
V
V
I
I
I
V
D
D
DS
D
GS
GS
DS
= 100 mA
= 5 A
= 10 A
= 100 mA
Specifications are subject to change without notice.
= 0 V
= 20 V
= 0 V
P
F = 1.0 MHz
OUT
= 300 W
PACKAGE STYLE .400 BAL FLG (D)
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
E
MINIMUM TYPICAL MAXIMUM
ORDER CODE: ASI10707
D
.1925
3500
1.0
65
12
50
C
I
1.090 / 27.69
1.335 / 33.91
.080x45°
.580 / 14.73
.395 / 10.03
.850 / 21.59
.220 / 5.59
.380 / 9.65
.003 / 0.08
.100 / 2.54
.060 / 1.52
MINIMUM
inches / mm
A
H
.435 / 11.05
.210 / 5.33
.125 / 3.18
N
F
B
375
188
26
14
55
G
1.105 / 28.07
1.345 / 34.16
.620 / 15.75
.407 / 10.34
.870 / 22.10
MAXIMUM
.230 / 5.84
.390 / 9.91
.007 / 0.18
.070 / 1.78
.115 / 2.92
.230 / 5.84
inches / mm
FULL R
J
M
(4X).060 R
K
VFT300-28
L
1.5
5.0
1.0
5.0
UNITS
mA
mS
dB
µA
pF
REV. C
%
V
V
V
1/1
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