K4H510638E-TC/LA2 SAMSUNG [Samsung semiconductor], K4H510638E-TC/LA2 Datasheet - Page 8

• Manufacturer Part Number: K4H510638E-TC/LA2
• Description: Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
• Manufacturer: SAMSUNG [Samsung semiconductor]

st. 32M x 4Bit x 4 Banks / st. 16M x 8Bit x 4 Banks Double Data Rate SDRAM
General Description
The K4H510638E / K4H510738E is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,553,332 / 4x
16,777,216 words by 4/ 8bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe
allow extremely high performance up to 266Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating fre-
quencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance mem-
ory system applications.
Absolute Maximum Rating
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
DDR SDRAM stacked 512Mb E-die (x4/x8)
Note :
DC Operating Conditions
Supply voltage(for device with a nominal V
I/O Supply voltage
I/O Reference voltage
I/O Termination voltage(system)
Input logic high voltage
Input logic low voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
V-I Matching: Pullup to Pulldown Current Ratio
Input leakage current
Output leakage current
Output High Current(Normal strengh driver) ;V
Output High Current(Normal strengh driver) ;V
Output High Current(Half strengh driver) ;V
Output High Current(Half strengh driver) ;V
Voltage on V
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1.VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same.
2. V
3. V
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire
Peak-to peak noise on VREF may not exceed +/-2% of the dc value.
V
temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the
maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the
maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
TT
REF
ID
Voltage on any pin relative to V
is the magnitude of the difference between the input level on CK and the input level on CK.
is not applied directly to the device. V
, and must track variations in the DC level of V
Storage temperature
DD
Short circuit current
Power dissipation
& V
Parameter
DDQ
Parameter
supply relative to V
SS
DD
OUT
OUT
of 2.5V)
OUT
SS
OUT
= V
= V
TT
= V
TT
Recommended operating conditions(Voltage referenced to V
= V
TT
is a system supply for signal termination resistors, is expected to be set equal to
+ 0.45V
TT
- 0.45V
TT
+ 0.84V
- 0.84V
REF
V
V
Symbol
DD
IN
T
, V
I
, V
P
STG
OS
D
OUT
Symbol
VI(Ratio)
DDQ
V
V
V
V
V
V
IH
IN
ID
IL
V
V
I
I
I
I
I
DDQ
REF
(DC)
OZ
OH
OH
(DC)
(DC)
(DC)
OL
OL
DD
I
TT
I
0.49*VDDQ
V
V
REF
REF
-16.8
0.36
0.71
16.8
Min
-0.3
-0.3
2.3
2.3
-2
-5
-9
-55 ~ +150
9
+0.15
-0.5 ~ 3.6
-1.0 ~ 3.6
-0.04
Value
1.5
50
0.51*VDDQ
V
V
V
V
V
Rev. 1.0 July. 2003
REF
REF
DDQ
DDQ
DDQ
Max
2.7
2.7
1.4
2
5
+0.04
-0.15
+0.3
+0.3
+0.6
DDR SDRAM
SS
=0V, T
Unit
Unit
mA
mA
mA
mA
uA
uA
mA
°C
V
V
V
V
V
V
V
W
V
V
-
A
=0 to 70°C)
Note
1
2
3
4