K4H510638E-TC/LA2 SAMSUNG [Samsung semiconductor], K4H510638E-TC/LA2 Datasheet - Page 11

• Manufacturer Part Number: K4H510638E-TC/LA2
• Description: Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
• Manufacturer: SAMSUNG [Samsung semiconductor]

DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM I
IDD6
IDD6
Symbol
Symbol
IDD4W
IDD2Q
IDD2P
IDD2F
IDD3P
IDD3N
IDD4R
IDD7A
IDD4W
IDD2Q
IDD2P
IDD2F
IDD3P
IDD3N
IDD4R
IDD7A
IDD0
IDD1
IDD5
IDD0
IDD1
IDD5
Low power
Low power
Normal
Normal
DD
spec table
AA(DDR266@CL=2.0)
AA(DDR266@CL=2.0)
100
120
165
180
290
140
100
120
165
140
180
290
40
36
35
65
40
36
35
65
6
6
3
6
6
3
st 128Mx4 (K4H510638E)
st 64Mx8 (K4H510738E)
A2(DDR266@CL=2.0)
A2(DDR266@CL=2.0)
100
120
165
140
180
290
100
120
165
140
180
290
40
36
35
65
40
36
35
65
6
6
3
6
6
3
B0(DDR266@CL=2.5)
B0(DDR266@CL=2.5)
100
120
165
140
180
290
100
120
165
140
180
290
40
36
35
65
40
36
35
65
6
6
3
6
6
3
Rev. 1.0 July. 2003
DDR SDRAM
(V
DD
=2.7V, T = 10°C)
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Optional
Optional
Notes
Notes