K4H510638E-TC/LA2 SAMSUNG [Samsung semiconductor], K4H510638E-TC/LA2 Datasheet - Page 12

• Manufacturer Part Number: K4H510638E-TC/LA2
• Description: Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
• Manufacturer: SAMSUNG [Samsung semiconductor]

Notes :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
AC Overshoot/Undershoot specification for Address and Control Pins
DDR SDRAM stacked 512Mb E-die (x4/x8)
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
AC Operating Conditions
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and /CK inputs
Input Crossing Point Voltage, CK and /CK inputs
Parameter/Condition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.5V
0
Parameter
AC overshoot/Undershoot Definition
Area = 4.5V-ns
0.5
0.6875
VDD
1.0
Overshoot
1.5
2.0
2.5
3.0
Symbol
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
Tims(ns)
3.5
4.0
4.5
0.5*VDDQ-0.2
VREF + 0.31
5.0
Maximum Amplitude = 1.5V
5.5
Min
0.7
undershoot
GND
6.0
6.3125
6.5
0.5*VDDQ+0.2
7.0
VREF - 0.31
VDDQ+0.6
Max-10
Rev. 1.0 July. 2003
DDR333
TBD
TBD
TBD
TBD
DDR SDRAM
Specification
Unit
V
V
V
V
DDR200/266
4.5 V-ns
4.5 V-ns
1.5 V
1.5 V
Note
1
2