ATTIny13-12PI ATMEL Corporation, ATTIny13-12PI Datasheet - Page 106
ATTIny13-12PI
Manufacturer Part Number
ATTIny13-12PI
Description
8-bit AVR Microcontroller with 1K Bytes In-System Programmable Flash
Manufacturer
ATMEL Corporation
Datasheet
1.ATTINY13-12PI.pdf
(169 pages)
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Table 50. Serial Programming Instruction Set
Note:
106
Instruction
Programming Enable
Chip Erase
Read Program Memory
Load Program Memory Page
Write Program Memory Page
Read EEPROM Memory
Write EEPROM Memory
Load EEPROM Memory
Page (page access)
Write EEPROM Memory
Page (page access)
Read Lock bits
Write Lock bits
Read Signature Byte
Write Fuse bits
Write Fuse High bits
Read Fuse bits
Read Fuse High bits
Read Calibration Byte
Poll RDY/BSY
a = address high bits, b = address low bits, H = 0 - Low byte, 1 - High Byte, o = data out, i = data in, x = don’t care
ATtiny13
1010 1100
1010 1100
0010 H000
0100 H000
0100 1100
1010 0000
1100 0000
1100 0001
1100 0010
0101 1000
1010 1100
0011 0000
1010 1100
1010 1100
0101 0000
0101 1000
0011 1000
1111 0000
Byte 1
0101 0011
100x xxxx
0000 000a
000x xxxx
0000 000a
000x xxxx
000x xxxx
0000 0000
00xx xxxx
0000 0000
111x xxxx
000x xxxx
1010 0000
1010 1000
0000 0000
0000 1000
000x xxxx
0000 0000
Byte 2
Instruction Format
xxxx xxxx
xxxx xxxx
bbbb bbbb
xxxb bbbb
bbxx xxxx
xxbb bbbb
xxbb bbbb
0000 00bb
xxbb bb00
xxxx xxxx
xxxx xxxx
xxxx xxbb
xxxx xxxx
xxxx xxxx
xxxx xxxx
xxxx xxxx
0000 0000
xxxx xxxx
Byte 3
xxxx xxxx
xxxx xxxx
oooo oooo
iiii iiii
xxxx xxxx
oooo oooo
iiii iiii
iiii iiii
xxxx xxxx
xxoo oooo
11ii iiii
oooo oooo
iiii iiii
iiii iiii
oooo oooo
oooo oooo
oooo oooo
xxxx xxxo
Byte4
Operation
Enable Serial Programming after
RESET goes low.
Chip Erase EEPROM and Flash.
Read H (high or low) data o from
Program memory at word address a:b.
Write H (high or low) data i to Program
memory page at word address b. Data
low byte must be loaded before Data
high byte is applied within the same
address.
Write Program memory Page at
address a:b.
Read data o from EEPROM memory at
address b.
Write data i to EEPROM memory at
address b.
Load data i to EEPROM memory page
buffer. After data is loaded, program
EEPROM page.
Write EEPROM page at address b.
Read Lock bits. “0” = programmed, “1”
= unprogrammed. See Table 42 on
page 100 for details.
Write Lock bits. Set bits = “0” to
program Lock bits. See Table 42 on
page 100 for details.
Read Signature Byte o at address b.
Set bits = “0” to program, “1” to
unprogram.
Set bits = “0” to program, “1” to
unprogram. See Table 36 on page 82
for details.
Read Fuse bits. “0” = programmed, “1”
= unprogrammed.
Read Fuse High bits. “0” = pro-
grammed, “1” = unprogrammed. See
Table 36 on page 82 for details.
Read Calibration Byte
If o = “1”, a programming operation is
still busy. Wait until this bit returns to
“0” before applying another command.
2535B–AVR–01/04
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