CY14B101L-SP25XI CYPRESS [Cypress Semiconductor], CY14B101L-SP25XI Datasheet - Page 8

• Manufacturer Part Number: CY14B101L-SP25XI
• Description: 1 Mbit (128K x 8) nvSRAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Data Retention and Endurance
Capacitance
In the following table, the capacitance parameters are listed.
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
AC Test Conditions
Input Pulse Levels .................................................... 0V to 3V
Input Rise and Fall Times (10% to 90%) ...................... <5 ns
Input and Output Timing Reference Levels .................... 1.5V
Note
Document Number: 001-06400 Rev. *J
DATA
NV
C
C
6. These parameters are guaranteed by design and are not tested.
IN
OUT
Parameter
Parameter
Parameter
C
Output
Θ
Θ
R
JA
JC
3.0V
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Input Capacitance
Output Capacitance
Data Retention at 55°C
Nonvolatile STORE Operations
30 pF
Description
Description
R1 577Ω
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA / JESD51.
T
V
A
CC
= 25°C, f = 1 MHz,
Description
= 0 to 3.0V
Figure 4. AC Test Loads
789Ω
R2
[6]
Test Conditions
Test Conditions
[6]
Output
3.0V
5 pF
R1 577Ω
32-SOIC
33.64
13.6
Max
Min
200
20
7
7
For Tri-state Specs
48-SSOP
CY14B101L
789Ω
16.35
32.9
R2
Page 8 of 18
Years
Unit
Unit
pF
pF
K
°C/W
°C/W
Unit
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