rd07mvs1-t112 Mitsumi Electronics, Corp., rd07mvs1-t112 Datasheet - Page 9

no-image

rd07mvs1-t112

Manufacturer Part Number
rd07mvs1-t112
Description
Silicon Mosfet Power Transistor,175mhz,520mhz,7w
Manufacturer
Mitsumi Electronics, Corp.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RD07MVS1-T112
Manufacturer:
CHINFA
Quantity:
5 000
Part Number:
RD07MVS1-T112
Manufacturer:
MIT
Quantity:
20 000
RD07MVS1
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme
short current flow between the drain and the source of the device. These results causes in fire or injury.
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
ELECTROSTATIC SENSITIVE DEVICE
RoHS Compliance,
OBSERVE HANDLING PRECAUTIONS
Keep safety first in your circuit designs!
MITSUBISHI ELECTRIC
warning !
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
9/9
MITSUBISHI RF POWER MOS FET
RD07MVS1
10 Jan 2006

Related parts for rd07mvs1-t112