rd07mvs1-t112 Mitsumi Electronics, Corp., rd07mvs1-t112 Datasheet - Page 3

• Manufacturer Part Number: rd07mvs1-t112
• Description: Silicon Mosfet Power Transistor,175mhz,520mhz,7w
• Manufacturer: Mitsumi Electronics, Corp.

TYPICAL CHARACTERISTICS
RD07MVS1
10
120
100
9
8
7
6
5
4
3
2
1
0
80
60
40
20
60
50
40
30
20
10
0
0
0
0
0
Vds VS. Coss CHARACTERISTICS
Ta=+25°C
On PCB(*1)
Ta=+25°C
f=1MHz
Vds-Ids CHARACTERISTICS
AMBIENT TEMPERATURE Ta(°C)
AMBIENT TEMPERATURE
2
DRAIN DISSIPATION VS.
40
5
ELECTROSTATIC SENSITIVE DEVICE
RoHS Compliance,
*1:The material of the PCB
On PCB(*1) with Heat-sink
4
OBSERVE HANDLING PRECAUTIONS
Vds(V)
80
Glass epoxy (t=0.6 mm)
Vds(V)
10
6
120
15
160
8
MITSUBISHI ELECTRIC
10
200
20
Vgs=5V
Vgs=4.5V
Vgs=3.5V
Vgs=3V
Vgs=4V
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
3/9
20
18
16
14
12
10
10.0
160
140
120
100
8
6
4
2
0
8.0
6.0
4.0
2.0
0.0
80
60
40
20
0
0
0
0
Vds VS. Crss CHARACTERISTICS
Vds VS. Ciss CHARACTERISTICS
Ta=+25°C
f=1MHz
MITSUBISHI RF POWER MOS FET
RD07MVS1
Vgs-Ids CHARACTERISTICS
Ta=+25°C
f=1MHz
Ta=+25°C
Vds=10V
1
5
5
Vds(V)
2
Vgs(V)
Vds(V)
10
10
GM
3
15
Ids
15
4
10 Jan 2006
20
5
20