rd07mvs1-t112 Mitsumi Electronics, Corp., rd07mvs1-t112 Datasheet - Page 7

• Manufacturer Part Number: rd07mvs1-t112
• Description: Silicon Mosfet Power Transistor,175mhz,520mhz,7w
• Manufacturer: Mitsumi Electronics, Corp.

INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
RD07MVS1
520MHz Zin* Zout*
175MHz Zin* Zout*
Zo=10:
Zo=10:
520MHz Zin*
ELECTROSTATIC SENSITIVE DEVICE
RoHS Compliance,
OBSERVE HANDLING PRECAUTIONS
520MHz Zout*
175MHz Zin*
175MHz Zout*
MITSUBISHI ELECTRIC
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
7/9
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W
Vdd=7.2V, Idq=750mA(Vgg adj.),Pin=0.7W
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
MITSUBISHI RF POWER MOS FET
RD07MVS1
Zin*=1.55+j5.53
Zout*=3.24-j0.26
Zin*=0.76+j0.06
Zout*=1.61-j0.52
10 Jan 2006