rd07mvs1-t112 Mitsumi Electronics, Corp., rd07mvs1-t112 Datasheet - Page 4

• Manufacturer Part Number: rd07mvs1-t112
• Description: Silicon Mosfet Power Transistor,175mhz,520mhz,7w
• Manufacturer: Mitsumi Electronics, Corp.

TYPICAL CHARACTERISTICS
RD07MVS1
30
25
20
15
10
5
0
40
30
20
10
40
30
20
10
4
0
0
Ta=25°C
f=175MHz
Pin=0.3W
Icq=700mA
Zg=ZI=50 ohm
-5
0
Vdd-Po CHARACTERISTICS
Pin-Po CHARACTERISTICS
Pin-Po CHARACTERISTICS
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=750mA
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=700mA
6
0
5
ELECTROSTATIC SENSITIVE DEVICE
RoHS Compliance,
10 15 20 25 30 35
@f=175MHz
@f=175MHz
@f=520MHz
5
8
Gp
Vdd(V)
OBSERVE HANDLING PRECAUTIONS
Pin(dBm)
Pin(dBm)
10 15 20 25 30
Gp
Po
Po
10
12
3
3 3
3 3
3
Po
Idd
MITSUBISHI ELECTRIC
14
80
60
40
20
0
80
60
40
20
0
6
5
4
3
2
1
0
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
4/9
12.0
10.0
14.0
12.0
10.0
25
20
15
10
5
0
8.0
6.0
4.0
2.0
0.0
8.0
6.0
4.0
2.0
0.0
4
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
Ta=25°C
f=520MHz
Pin=0.7W
Icq=750mA
Zg=ZI=50 ohm
Vdd-Po CHARACTERISTICS
Pin-Po CHARACTERISTICS
Pin-Po CHARACTERISTICS
MITSUBISHI RF POWER MOS FET
RD07MVS1
6
@f=175MHz
Po
@f=520MHz
@f=520MHz
Po
Pin(mW)
8
Pin(W)
Vdd(V)
500
Idd
10
Idd
d
d
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=700mA
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=750mA
12
1000
Po
Idd
14
100
80
60
40
20
100
90
80
70
60
50
40
30
10 Jan 2006
5
4
3
2
1
0