rd07mvs1-t112 Mitsumi Electronics, Corp., rd07mvs1-t112 Datasheet - Page 6

• Manufacturer Part Number: rd07mvs1-t112
• Description: Silicon Mosfet Power Transistor,175mhz,520mhz,7w
• Manufacturer: Mitsumi Electronics, Corp.

TEST CIRCUIT(f=175MHz)
TEST CIRCUIT(f=520MHz)
RD07MVS1
R F-in
5m m
RF-in
L: Enam eled wire 7Turns,D:0.43m m ,2.46m m O .D
L: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D
C 1,C 2:1000pF,0.022uF in parallel
C1,C 2:1000pF,0.022uF in parallel
62pF
19.5m m
68pF
4.7kO HM
C1
46m m
140pF
24.5m m
ELECTROSTATIC SENSITIVE DEVICE
RoHS Compliance,
Vgg
W
OBSERVE HANDLING PRECAUTIONS
19m m
9m m
4.7kO HM
37pF
C1
100pF
1m m 11.5m m
3.5m m
Vgg
10pF
W
68O HM
180pF
19m m
3.5m m
MITSUBISHI ELECTRIC
RD07MVS1
3m m
520MHz
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD 07MVS1
175MHz
6/9
3.5m m
Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m
W :ine width=1.0m m
Note:Board m aterial- Teflon substrate
Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m
Note:Board m aterial- Teflon substrate
W :line width=1.0m m
3.5m m
20pF
20pF
6.5m m
22pF
22pF
19m m
11.5m m
MITSUBISHI RF POWER MOS FET
RD07MVS1
Vdd
19m m
6pF
W
6.5m m
L
6.5m m
Vdd
L
W
C2
18pF
44.5m m
16pF
28.5m m
10uF,50V
C2
68pF
10uF,50V
56pF
10m m
RF-out
62pF
10 Jan 2006
5m m
R F-out