2SJ319S HITACHI [Hitachi Semiconductor], 2SJ319S Datasheet - Page 6

• Manufacturer Part Number: 2SJ319S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SJ319(L), 2SJ319(S)
6
0.03
0.01
0.3
0.1
3
1
10 µ
D = 1
0.5
100 µ
Normalized Transient Thermal Impedance vs. Pulse Width
–5
–4
–3
–2
–1
0
Source to Drain Voltage
Pulse Test
1 m
–0.4
Reverse Drain Current vs.
–10 V
Source to Drain Voltage
Pulse Width
–0.8
10 m
–1.2
V
GS
PW (S)
= 0, 5 V
V
P
–1.6
DM
SD
ch – c(t) = s (t) •
ch – c = 6.25 °C/W, Tc = 25 °C
100 m
(V)
–2
PW
T
1
ch – c
Tc = 25°C
D =
PW
T
10