2SJ319S HITACHI [Hitachi Semiconductor], 2SJ319S Datasheet - Page 2

• Manufacturer Part Number: 2SJ319S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SJ319(L), 2SJ319(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
2
2. Value at T
1. Pulse test
10 s, duty cycle
C
= 25 C
Symbol Min
V
V
I
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
fs
|
1%
–200
—
—
–2.0
—
1.0
—
—
—
—
—
—
—
—
—
20
Symbol
V
V
I
I
I
Pch*
Tch
Tstg
Typ
—
—
—
—
—
1.7
1.7
330
130
25
10
30
40
30
–1.15
180
D
D(pulse)
DR
DSS
GSS
2
*
1
Max
—
—
–100
–4.0
2.3
—
—
—
—
—
—
—
—
—
—
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Ratings
–200
–3
–12
–3
20
150
–55 to +150
20
Test conditions
I
I
V
V
I
I
I
V
f = 1 MHz
I
R
I
I
di
D
G
D
D
D
D
F
F
GS
DS
DS
L
F
= –3 A, V
= –3 A, V
= –10 mA, V
= 100 A, V
= –1 mA, V
= –2 A, V
= –2 A, V
= –2 A, V
/dt = 50 A/ s
= 15
= –160 V, V
= –10 V, V
= 16 V, V
GS
GS
GS
DS
GS
Unit
V
V
A
A
A
W
C
C
DS
= 0
= 0,
= –10 V*
= –10 V*
= –10 V,
DS
GS
GS
DS
GS
= –10 V
= 0
= 0,
= 0
= 0
= 0
1
1