2SJ319S HITACHI [Hitachi Semiconductor], 2SJ319S Datasheet - Page 3

• Manufacturer Part Number: 2SJ319S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

–5
–4
–3
–2
–1
20
15
10
0
5
0
Pulse Test
Drain to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
–4
50
–10 V
–8
100
V
–12
–8 V
GS
= –3.5 V
Tc ( C)
150
V
–16
–4 V
DS
–5 V
–6 V
(V)
–20
200
–0.05
–0.3
–0.1
–50
–30
–10
–3
–1
–5
–4
–3
–2
–1
–1
0
Drain to Source Voltage
Gate to Source Voltage
Operation in
this area is
limited by R
Ta = 25 °C
Maximum Safe Operation Area
Typical Transfer Characteristics
–3
–2
Tc = –25 °C
2SJ319(L), 2SJ319(S)
–10
DS(on)
–4
–30
–6
V
Pulse Test
DS
–100 –300 –500
V
V
= –10 V
75 °C
DS
GS
–8
25 °C
(V)
(V)
–10
3