2SJ319S HITACHI [Hitachi Semiconductor], 2SJ319S Datasheet - Page 5

• Manufacturer Part Number: 2SJ319S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

500
200
100
–100
–200
–300
–400
–500
50
20
10
–0.05 –0.1 –0.2
5
0
0
V
Reverse Drain Current
DS
Dynamic Input Characteristics
Body–Drain Diode Reverse
4
V
Gate Charge
DD
Recovery Time
di/dt = 50 A/µs, V
duty < 1 %, Ta = 25 °C
= –50 V
–100 V
–150 V
8
–0.5
V
DD
12
= –150 V
–1
Qg (nc)
–100 V
–50 V
I
V
DR
–2
GS
GS
16
(A)
= 0
–5
20
0
–4
–8
–12
–16
–20
1000
500
200
100
500
200
100
50
20
10
50
20
10
–0.05 –0.1 –0.2
5
5
0
Drain to Source Voltage V
–10
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
V
duty < 1 %, PW = 2 µs
Drain Current
GS
2SJ319(L), 2SJ319(S)
= –10 V, V
–20
r t
–0.5 –1
t
t
d(off)
d(on)
t f
Coss
Crss
Ciss
–30
DD
I
–2
D
V
f = 1 MHz
GS
= –30 V
(A)
-40
DS
= 0
–5
(V)
–10
–50
5