2SJ319S HITACHI [Hitachi Semiconductor], 2SJ319S Datasheet - Page 4

• Manufacturer Part Number: 2SJ319S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SJ319(L), 2SJ319(S)
4
–20
–16
–12
–40
–8
–4
5
4
3
2
1
Static Drain to Source on State Resistance
0
0
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Case Temperature
I
–4
0
D
Gate to Source Voltage
= –5 A
vs. Temperature
40
–8
I
80
12
D
Pulse Test
V
Pulse Test
GS
–2 A
= –5 A
Tc
–2 A
–1 A
–1 A
V
= –10 V
120
–16
GS
(°C)
(V)
160
–20
0.5
0.2
0.1
0.2
0.1
0.5
–0.05 –0.1 –0.2
10
3
2
1
Static Drain to Source on State Resistance
–0.2
5
2
1
Forward Transfer Admittance vs.
V
Pulse Test
V
Pulse Test
DS
GS
–0.5
Drain Current I
Tc = –25 °C
= –10 V
Drain Current
= –10 V
vs. Drain Current
Drain Current
75 °C
–0.5 –1
–1
25 °C
–2
D
I
–2
D
(A)
(A)
–5
–5
–10
–10