m471b5273bh1 Samsung Semiconductor, Inc., m471b5273bh1 Datasheet - Page 9

• Manufacturer Part Number: m471b5273bh1
• Description: Ddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2
3. V
8.0 Absolute Maximum Ratings
8.1 Absolute Maximum DC Ratings
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
8.2 DRAM Component Operating Temperature Range
Note :
1. Operating Temperature T
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case tem-
3. Some applications require operation of the Extended Temperature Range between 85°C and 95°C case temperature. Full specifications are guaran-
9.0 AC & DC Operating Conditions
9.1 Recommended DC Operating Conditions (SSTL - 15)
Note :
1. Under all conditions V
2. V
Unbuffered SoDIMM
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with
a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9us. It is also possible to specify a component
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
standard.
500mV; V
JEDEC document JESD51-2.
perature must be maintained between 0-85°C under all operating conditions
teed in this range, but the following additional conditions apply:
V
Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b) or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7
= 0b)
DDQ
DD
with 1X refresh (tREFI to 7.8us) in the Extended Temperature Range.
Symbol
IN,
V
Symbol
T
V
Symbol
V
DDQ
STG
and V
V
T
V
DD
DDQ
tracks with V
DD
OPER
OUT
REF
DDQ
may be equal to or less than 300mV.
must be within 300mV of each other at all times;and V
Supply Voltage
Supply Voltage for Output
DD
Voltage on V
Voltage on V
Voltage on any pin relative to V
. AC parameters are measured with V
DDQ
OPER
Storage Temperature
must be less than or equal to V
is the case surface temperature on the center/top side of the DRAM. For measurement conditions, please refer to the
Parameter
DDQ
DD
Parameter
pin relative to V
pin relative to V
Operating Temperature Range
Parameter
SS
SS
SS
DD
DD
.
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and V
DDQ
REF
1.425
1.425
Min.
tied together.
must be not greater than 0.6 x V
-0.4 V ~ 1.975 V
-0.4 V ~ 1.975 V
-0.4 V ~ 1.975 V
-55 to +100
Rating
Rating
Typ.
1.5
1.5
0 to 95
rating
Rev. 1.0 December 2008
DDQ
1.575
1.575
Max.
, When V
DDR3 SDRAM
Unit
DD
°C
Units
and V
V
V
Units
°C
V
V
V
DDQ
are less than
Notes
1, 2, 3
Notes
1,2
Notes
1,2
1, 2
1,3
1,3
1