mt18hvs25672rhy-667 Micron Semiconductor Products, mt18hvs25672rhy-667 Datasheet - Page 2

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mt18hvs25672rhy-667

Manufacturer Part Number
mt18hvs25672rhy-667
Description
2gb X72, Dr 200-pin Ddr2 Sdram Vlp Sordimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 2:
Table 3:
PDF: 09005aef82882ad5/Source: 09005aef82882b0e
HVS18C_256x72RH.fm - Rev. B 5/08 EN
Parameter
Part Number
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
MT18HVS25672RH(I)Y-667__
MT18HVS25672RH(I)Y-53E__
MT18HVS25672RH(I)Y-40E__
Addressing
Part Numbers and Timing Parameters – 2GB Modules
Base device: MT47H256M8THN
2
Notes:
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT18HVS25672RHY-667E1.
Module
Density
2GB
2GB
2GB
1
, 2Gb TwinDie
Configuration
256 Meg x 72
256 Meg x 72
256 Meg x 72
2GB (x72, DR) 200-Pin DDR2 SDRAM VLP SORDIMM
TM
2
DDR2 SDRAM
Bandwidth
Module
5.3 GB/s
4.3 GB/s
3.2 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Memory Clock/
3.75ns/533 MT/s
2Gb TwinDie
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
8 (BA0–BA2)
2 (S0#, S1#)
1K (A0–A9)
©2007 Micron Technology, Inc. All rights reserved.
A0–A13
2GB
TM
1KB
8K
(256 Meg x 8)
(CL-
Latency
t
Features
5-5-5
4-4-4
3-3-3
RCD-
t
RP)

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