r5f3650kcnfb Renesas Electronics Corporation., r5f3650kcnfb Datasheet - Page 56

• Manufacturer Part Number: r5f3650kcnfb
• Description: M16c/65c Group Renesas Mcu
• Manufacturer: Renesas Electronics Corporation.

M16C/65C Group
R01DS0015EJ0100 Rev.1.00
Feb 07, 2011
5.1.5
Notes:
Table 5.9
Notes:
-
f(SLOW_R)
-
-
-
-
-
-
t
-
-
-
-
-
-
t
-
d(SR-SUS)
PS
Symbol
Table 5.8
1.
2.
3.
V
1.
2.
3.
4.
5.
6.
7.
Symbol
CC1
V
CC1
Set the PM17 bit in the PM1 register to 1 (one wait).
When the frequency is over this value, set the FMR17 bit in the FMR1 register to 0 (one wait) or the PM17 bit in
the PM1 register to 1 (one wait)
Set the PM17 bit in the PM1 register to 1 (one wait). When using 125 kHz on-chip oscillator clock or sub clock as
the CPU clock source, a wait is not necessary.
Definition of program and erase cycles:
The program and erase cycles refer to the number of per-block erasures. If the program and erase cycles are n
(n = 1,000), each block can be erased n times. For example, if a block is erased after writing 2 word data 16,384
times, each to a different address, this counts as one program and erase cycles. Data cannot be written to the
same address more than once without erasing the block (rewrite prohibited).
Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
In a system that executes multiple programming operations, the actual erasure count can be reduced by writing
to sequential addresses in turn so that as much of the block as possible is used up before performing an erase
operation. It is advisable to retain data on the erasure cycles of each block and limit the number of erase
operations to a certain number.
If an error occurs during block erase, attempt to execute the clear status register command, then execute the
block erase command at least three times until the erase error does not occur.
Customers desiring program/erase failure rate information should contact a Renesas Electronics sales office.
The data hold time includes time that the power supply is off or the clock is not supplied.
After an erase start or erase restart, if an interval of at least 20 ms is not set before the next suspend request, the
erase sequence cannot be completed.
= 2.7 to 5.5 V at T
= 2.7 to 5.5 V, T
Program and erase cycles
2 word program time
Lock bit program time
Block erase time
Time delay from suspend request
until suspend
Interval from erase start/restart
until following suspend request
Suspend interval necessary for
auto-erasure to complete
Time from suspend until erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
Flash memory circuit stabilization wait time
Data hold time
Flash Memory Electrical Characteristics
CPU rewrite mode
Slow read mode
Low current consumption read mode
Data flash read
Flash Memory (Program ROM 1, 2) Electrical Characteristics
CPU Clock When Operating Flash Memory (f
Parameter
opr
opr
(6)
Parameter
= -20 ° C to 85 ° C/-40 ° C to 85 ° C unless otherwise specified.
= 0 ° C to 60 ° C (option: -40 ° C to 85 ° C), unless otherwise specified.
(7)
(1), (3), (4)
V
V
V
V
T
Ambient temperature = 55 ° C
opr
CC1
CC1
CC1
CC1
= -20 ° C to 85 ° C/-40 ° C to 85 ° C
2.7 V ≤ V
3.0 V < V
= 3.3 V, T
= 3.3 V, T
= 3.3 V, T
= 3.3 V, T
Conditions
Conditions
CC1
CC1
opr
opr
opr
opr
≤ 3.0 V
= 25 ° C
= 25 ° C
= 25 ° C
= 25 ° C
≤ 5.5 V
(BCLK)
)
Min.
1,000
Min.
2.7
2.7
20
20
0
0
(2)
fC(32.768)
Standard
5. Electrical Characteristics
Typ.
Standard
Typ.
150
0.2
70
30
5
10
16
20
+
Max.
+
Max.
4000
3000
5
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35
3.0
5.5
5.5
60
50
--------------- -
f
--------------- -
f
(3)
(
(
(1)
(2)
(2)
BCLK
BCLK
3
1
)
)
times
MHz
MHz
MHz
MHz
Unit
kHz
year
Unit
ms
ms
μ s
μ s
μ s
μ s
μ s
° C
V
V
s