r5f3650kcnfb Renesas Electronics Corporation., r5f3650kcnfb Datasheet - Page 107

• Manufacturer Part Number: r5f3650kcnfb
• Description: M16c/65c Group Renesas Mcu
• Manufacturer: Renesas Electronics Corporation.

M16C/65C Group
R01DS0015EJ0100 Rev.1.00
Feb 07, 2011
Figure 5.34
Read timing
BCLK
CSi
ADi
BHE
ALE
RD
DBi
Write timing
BCLK
CSi
ADi
BHE
ALE
WR, WRL
WRH
DBi
Memory Expansion Mode and Microprocessor Mode
(in wait state setting 2 φ + 3 φ, 2 φ + 4 φ, 3φ + 4 φ, and 4 φ + 5 φ, and
when inserting 1 to 3 recovery cycles inserted and accessing external area)
t
25ns(max.)
d(BCLK-ALE)
t
25ns(max.)
d(BCLK-ALE)
Measuring conditions
t
cyc
Hi-Z
V
Input timing voltage: V = 0.6 V, V
Output timing voltage: V = 1.5 V, V
CC1
=
t
30ns(max.)
Timing Diagram
t
30ns(max.)
d(BCLK-CS)
d(BCLK-AD)
t
30ns(max.)
t
30ns(max.)
d(BCLK-CS)
d(BCLK-AD)
= V
f(BCLK)
t
cyc
t
cyc
CC2
1
= 3V
t
-4ns(min.)
t
-4ns(min.)
h(BCLK-ALE)
h(BCLK-ALE)
IL
OL
Hi-Z
IH
OH
= 2.4 V
= 1.5 V
t
30ns(max.)
t
40ns(max.)
d(BCLK-WR)
d(BCLK-DB)
t
30ns(max.)
d(BCLK-RD)
(n × t
(n × t
m: 1 (when 1 recovery cycle inserted )
t
cyc
n: 3 (when 2 φ + 3 φ)
d(DB-WR)
4 (when 2 φ + 4 φ or 3 φ + 4 φ)
5 (when 4 φ + 5 φ)
t
cyc
2 (when 2 recovery cycles inserted)
3 (when 3 recovery cycles inserted)
ac4(RD-DB)
-40)ns(min.)
-60)ns(max.)
60ns(min.)
t
su(DB-RD)
(m × t
V
(m × t
(m × t
5. Electrical Characteristics
CC1
t
0ns(min.)
t
0ns(min.)
t
0ns(min.)
h(BCLK-RD)
h(RD-DB)
h(BCLK-WR)
cyc
t
cyc
cyc
h(WR-DB)
t
h(RD-AD)
t
-25)ns(min.)
h(WR-AD)
+0)ns(min.)
-15)ns(min.)
= V
CC2
Page 107 of 109
t
0ns(min.)
h(BCLK-AD)
t
0ns(min.)
t
0ns(min.)
t
0ns(min.)
h(BCLK-CS)
h(BCLK-CS)
h(BCLK-AD)
= 3V