s908ey16g2vfar Freescale Semiconductor, Inc, s908ey16g2vfar Datasheet - Page 42

• Manufacturer Part Number: s908ey16g2vfar
• Description: M68hc08 Microcontrollers Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

Memory
2.6.3 FLASH Mass Erase Operation
Use this step-by-step procedure to erase entire FLASH memory to read as logic 1:
42
10. After time, t
1. When in monitor mode, with security sequence failed (see
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE and MASS bits.
8. Wait for a time, t
9. Clear the HVEN bit.
instead of any FLASH address.
Mass erase is disabled whenever any block is protected (FLBPR does not
equal $FF).
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
RCV
(typical 1 μs), the memory can be accessed in read mode again.
NVS
MErase
NVHL
MC68HC908EY16A • MC68HC908EY8A Data Sheet, Rev. 1
(minimum 10 μs).
(minimum 100 μs).
(minimum 4 ms).
(1)
within the FLASH memory address range.
NOTE
NOTE
19.3.2
Security), write to the FLASH block protect register
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