sg2567rdr212451ib ETC-unknow, sg2567rdr212451ib Datasheet - Page 7

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sg2567rdr212451ib

Manufacturer Part Number
sg2567rdr212451ib
Description
Dram Module Ddr2 Sdram 2gbyte 240rdimm
Manufacturer
ETC-unknow
Datasheet
Block Diagram (Contd.)
Notes:
1. DM pin of all SDRAM devices is tied to V
2. PAR_IN has a pull-down resistor of 100KΩ.
Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe: 5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific: Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
SA0
SA1
SA2
SCL
SDA
BA0~BA2
A0~A13
PCK7#
ODT0
ODT1
RAS#
CAS#
CKE0
CKE1
PCK7
CS0#
CS1#
WE#
SA0
SA1
SA2
SCL
SDA
EEPROM
22Ω
SPD
SPD1
REG1~REG2
V
WP
DD
(x2)
R
E
G
S
E
R
S
T
I
CK0#
CK0
V
DDSPD
RCS0# to S# on (U2~U19)
RCS1# to S# on (U20~U37)
RA0~RA13 to all devices (U2~U37)
RBA0~RBA2 to all devices (U2~U37)
RRAS# to all devices (U2~U37)
RCAS# to all devices (U2~U37)
RWE# to all devices (U2~U37)
RODT0 to ODT on (U2~U19)
RODT1 to ODT on (U20~U37)
RCKE0 to CKE on (U2~U19)
RCKE1 to CKE on (U20~U37)
RESET#
RESET#
120Ω
±5%
120Ω
±5%
CK0
CK0#
OE
FBI
FBI#
SS.
0±80ps
PLL1
0±80ps
PLL
FBO#
FBO
K0#
Kn#
K0
Kn
V
DD
/V
DDSPD
/V
PAR_IN
PAR_IN
REF
SG2567RDR212451UU
/V
DDQ
V
22Ω
V
22Ω
V
SS
SS
SS
SDRAM
SDRAM
SDRAM
SDRAM
Register
Register
PAR_IN
C0
PAR_IN
C0
120Ω
120Ω
±5%
±5%
REG1
REG2
QERR#
QERR#
Decoupling
Capacitors
(4.7μF, 0.1μF, 0.22μF, 2.2nF)
October 16, 2007
ERR_OUT#
ERR_OUT#
7

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