BFU725F-N1 NXP Semiconductors, BFU725F-N1 Datasheet - Page 6

• Manufacturer Part Number: BFU725F-N1
• Description: Npn Wideband Silicon Germanium Rf Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BFU725F_N1_1
Product data sheet
Fig 4.
Fig 6.
C
(fF)
CBS
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
160
120
80
40
0
0
f = 1 MHz, T
Collector-base capacitance as a function of
collector-base voltage; typical values
V
Gain as a function of collector current; typical value
CE
= 2 V; T
amb
amb
4
= 25 C.
= 25 C.
(dB)
8
G
10
10
1
2
10
V
CB
1
001aah427
(V)
12
Rev. 01 — 13 July 2009
1
(1)
(2)
(3)
MSG
Fig 5.
MSG
G
max
(GHz)
NPN wideband silicon germanium RF transistor
10
f
T
G
60
40
20
max
0
I
0
V
Transition frequency as a function of collector
current; typical values
C
CE
(4)
(5)
001aah429
(mA)
= 2 V; f = 2 GHz; T
10
10
2
20
amb
BFU725F/N1
= 25 C.
30
© NXP B.V. 2009. All rights reserved.
I
001aak273
C
(mA)
40
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